Abstract: A rotating wing aircraft 1 comprises: at least one rotor blade 2; a primary gas-flow production means 7 for providing a flow of gas in an internal passage 13 of the at least one rotor blade 2; and a reserve gas-flow production means 11 for providing a flow of gas in the internal passage 13 of the at least one rotor blade 2.

Abstract: A data storage device comprising a recording head having a high damping magnetic alloy layer including at least one magnetic alloy element, and a 5d transition element; the high damping magnetic alloy layer having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure, and the mixed fcc and bcc crystal structure comprising fcc and bcc grains, with the bcc grains having an elongated shape relative to the fcc grains, a larger size than the fcc grains, and slip deformation, thereby providing the high damping magnetic alloy layer with a damping constant of up to about 0.07.

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Abstract: A rotor blade, the rotor blade comprising a cavity and one or more nozzles for the expulsion of compressed air from the rotor blade cavity thereby resulting in rotation of the rotor blade. The rotor blade further comprises a pressure regulating arrangement, the pressure regulating arrangement being operable to release compressed air from the rotor blade cavity.

Abstract: Embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In an embodiment, the lamp module plate comprises a back plate, a first ring that extends from the back plate, a second ring that extends from the back plate, and a third ring that extends from the back plate. In an embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

Abstract: A reaction-jet helicopter having an air compressor and a power source operable to power the compressor. The air compressor is in fluid communication with a cavity in a rotor blade of the reaction-jet helicopter. The rotor blade has one or more openings for the expulsion of compressed air from the cavity thereby resulting in rotation of the rotor blade. The reaction jet helicopter further has an arrangement for manipulating airflow between the compressor and the one or more openings. This results in reduced losses of energy as the airflow travels from the compressor to the one or more openings.

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

Abstract: A compressed gas ejection assembly 10 for a rotating wing aircraft blade 2 comprises a compressed gas passage 114 adapted to allow a substantially constant mass flow through the compressed gas ejection assembly 10 across at least a portion of the width of the compressed gas ejection assembly 10.

Abstract: A rotating wing aircraft 1 comprises: at least one rotor blade 2; a primary gas-flow production means 7 for providing a flow of gas in an internal passage 13 of the at least one rotor blade 2; and a reserve gas-flow production means 11 for providing a flow of gas in the internal passage 13 of the at least one rotor blade 2.

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: A packaged RF power amplifier (RFPA) configured to increase video bandwidth is disclosed as well is a process for implementing a RF power device to increase video bandwidth. The RF power device including at least one transistor; an output matching circuit coupled to an output lead and to the at least one transistor; at least one bias feed circuit coupled to the at least one transistor; and at least one coaxial resonator coupled between the at least one transistor and the at least one bias feed circuit.

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: Multi-station process chamber lids comprising a plurality of station openings are described. A station separation purge channel is around the station openings. A plurality of angular purge channels separate station openings from adjacent station openings. A lid support beam can compensate for deflection of the chamber lid body.

Abstract: A packaged RF power amplifier (RFPA) configured to increase video bandwidth is disclosed as well is a process for implementing a RF power device to increase video bandwidth. The RF power device including at least one transistor; an output matching circuit coupled to an output lead and to the at least one transistor; at least one bias feed circuit coupled to the at least one transistor; and at least one coaxial resonator coupled between the at least one transistor and the at least one bias feed circuit.

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.