Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Abstract: A system for performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Abstract: A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Abstract: A rotor blade, the rotor blade comprising a cavity and one or more nozzles for the expulsion of compressed air from the rotor blade cavity thereby resulting in rotation of the rotor blade. The rotor blade further comprises a pressure regulating arrangement, the pressure regulating arrangement being operable to release compressed air from the rotor blade cavity.

Abstract: A reaction-jet helicopter having an air compressor and a power source operable to power the compressor. The air compressor is in fluid communication with a cavity in a rotor blade of the reaction-jet helicopter. The rotor blade has one or more openings for the expulsion of compressed air from the cavity thereby resulting in rotation of the rotor blade. The reaction jet helicopter further has an arrangement for manipulating airflow between the compressor and the one or more openings. This results in reduced losses of energy as the airflow travels from the compressor to the one or more openings.

Abstract: Methods of depositing improved quality silicon nitride (SixNy) films are disclosed. Exemplary methods include exposing a semiconductor substrate in a semiconductor processing chamber to a silicon-containing precursor, to a first plasma produced from a first gas mixture comprising helium (He) and nitrogen (N2), the first gas mixture comprising a ratio of helium:nitrogen in a range of from 20:1 to 1000:1, and exposing the semiconductor substrate to a second plasma produced from a second gas mixture comprising helium (He), nitrogen (N2), and ammonia (NH3).

Abstract: A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Abstract: A compressed gas ejection assembly for a rotating wing aircraft blade comprising a compressed gas passage adapted to allow a substantially constant mass flow through the compressed gas ejection assembly across at least a portion of the width of the compressed gas ejection assembly.

Abstract: Embodiments disclosed herein include immersed inductively coupled and capacitively coupled plasma excitation methods, apparatuses and processes for large area substrates. A process chamber includes a pedestal for supporting a workpiece in a processing volume, an array of inductive elements in a portion of the processing volume above the pedestal, and a chamber top or lid over the array of inductive elements.

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Abstract: A rotating wing aircraft 1 comprises: at least one rotor blade 2; a primary gas-flow production means 7 for providing a flow of gas in an internal passage 13 of the at least one rotor blade 2; and a reserve gas-flow production means 11 for providing a flow of gas in the internal passage 13 of the at least one rotor blade 2.

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Abstract: A rotor blade, the rotor blade comprising a cavity and one or more nozzles for the expulsion of compressed air from the rotor blade cavity thereby resulting in rotation of the rotor blade. The rotor blade further comprises a pressure regulating arrangement, the pressure regulating arrangement being operable to release compressed air from the rotor blade cavity.

Abstract: Embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In an embodiment, the lamp module plate comprises a back plate, a first ring that extends from the back plate, a second ring that extends from the back plate, and a third ring that extends from the back plate. In an embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

Abstract: A reaction-jet helicopter having an air compressor and a power source operable to power the compressor. The air compressor is in fluid communication with a cavity in a rotor blade of the reaction-jet helicopter. The rotor blade has one or more openings for the expulsion of compressed air from the cavity thereby resulting in rotation of the rotor blade. The reaction jet helicopter further has an arrangement for manipulating airflow between the compressor and the one or more openings. This results in reduced losses of energy as the airflow travels from the compressor to the one or more openings.

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.