Abstract: Methods of depositing improved quality silicon nitride (SixNy) films are disclosed. Exemplary methods include exposing a semiconductor substrate in a semiconductor processing chamber to a silicon-containing precursor, to a first plasma produced from a first gas mixture comprising helium (He) and nitrogen (N2), the first gas mixture comprising a ratio of helium:nitrogen in a range of from 20:1 to 1000:1, and exposing the semiconductor substrate to a second plasma produced from a second gas mixture comprising helium (He), nitrogen (N2), and ammonia (NH3).

Abstract: Aspects of the disclosure relate to a system and method for cryptographically protecting data transferred between spatially distributed computing devices. An intermediary database may be used to facilitate the protected data transfer and/or record the data transfers. A first computing device may transfer, to the intermediary database, encrypted data that may be securely transferred to other computing devices. A second computing device may generate a GUI used to view data available from the intermediary database. Once data is selected by the second device, the second device may transfer a key (or other encryption mechanism) to the first device. The first computing device may encrypt the data using the received key and transmit the encrypted data to the intermediary database. The intermediary database may transmit the encrypted data to the second computing device, and the second computing device may decrypt and use the data.

Abstract: A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Abstract: A compressed gas ejection assembly for a rotating wing aircraft blade comprising a compressed gas passage adapted to allow a substantially constant mass flow through the compressed gas ejection assembly across at least a portion of the width of the compressed gas ejection assembly.

Abstract: Embodiments disclosed herein include immersed inductively coupled and capacitively coupled plasma excitation methods, apparatuses and processes for large area substrates. A process chamber includes a pedestal for supporting a workpiece in a processing volume, an array of inductive elements in a portion of the processing volume above the pedestal, and a chamber top or lid over the array of inductive elements.

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Abstract: A rotating wing aircraft 1 comprises: at least one rotor blade 2; a primary gas-flow production means 7 for providing a flow of gas in an internal passage 13 of the at least one rotor blade 2; and a reserve gas-flow production means 11 for providing a flow of gas in the internal passage 13 of the at least one rotor blade 2.

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Abstract: A rotor blade, the rotor blade comprising a cavity and one or more nozzles for the expulsion of compressed air from the rotor blade cavity thereby resulting in rotation of the rotor blade. The rotor blade further comprises a pressure regulating arrangement, the pressure regulating arrangement being operable to release compressed air from the rotor blade cavity.

Abstract: Embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In an embodiment, the lamp module plate comprises a back plate, a first ring that extends from the back plate, a second ring that extends from the back plate, and a third ring that extends from the back plate. In an embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

Abstract: A reaction-jet helicopter having an air compressor and a power source operable to power the compressor. The air compressor is in fluid communication with a cavity in a rotor blade of the reaction-jet helicopter. The rotor blade has one or more openings for the expulsion of compressed air from the cavity thereby resulting in rotation of the rotor blade. The reaction jet helicopter further has an arrangement for manipulating airflow between the compressor and the one or more openings. This results in reduced losses of energy as the airflow travels from the compressor to the one or more openings.

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

Abstract: A compressed gas ejection assembly 10 for a rotating wing aircraft blade 2 comprises a compressed gas passage 114 adapted to allow a substantially constant mass flow through the compressed gas ejection assembly 10 across at least a portion of the width of the compressed gas ejection assembly 10.

Abstract: A rotating wing aircraft 1 comprises: at least one rotor blade 2; a primary gas-flow production means 7 for providing a flow of gas in an internal passage 13 of the at least one rotor blade 2; and a reserve gas-flow production means 11 for providing a flow of gas in the internal passage 13 of the at least one rotor blade 2.

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: A packaged RF power amplifier (RFPA) configured to increase video bandwidth is disclosed as well is a process for implementing a RF power device to increase video bandwidth. The RF power device including at least one transistor; an output matching circuit coupled to an output lead and to the at least one transistor; at least one bias feed circuit coupled to the at least one transistor; and at least one coaxial resonator coupled between the at least one transistor and the at least one bias feed circuit.