Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract: The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced.

Abstract: The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material.

Abstract: There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: An escrow unit is an electromechanical device used to collect or return coins deposited in a pay telephone. An escrow management system 10 for use in controlling a pay telephone escrow unit 26 is provided which consists of an energy storage unit 20 which stores a voltage for use in activating escrow unit 26 upon control unit 40 closing discharge switch 30. The system also contains a detector 42 to determine the voltage requirement of escrow unit 26 by sensing characteristics of escrow unit 26 related to the impedance of the escrow unit. The system also contains a control unit 40 which controls energy storage unit 20 and detector 42 such that escrow management system 10 can both dynamically determine the voltage required to activate escrow unit 26 and supply the correct voltage for activation of escrow unit 26.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: A wafer position error detection and correction system determines the presence of a wafer on a wafer transport robot blade. The system also determines a wafer position error by monitoring the position of the wafer with respect to the blade with one sensor which is located proximate to each entrance of a process chamber. When a wafer position error is detected, the system determines the extent of the misalignment and corrects such misalignment if correctable by the wafer transport robot or alerts an operator for operator intervention. The system incorporates a transparent cover on the surface of the wafer handling chamber and four optical detection sensors disposed on the surface of the transparent cover, in which each sensor is placed proximate to the entrance of the process chamber. In addition, an I/O sensor is placed adjacent the I/O slit valve to detect and correct wafer position errors.

Abstract: The temperatures of scavenger-emitting kit parts in a high-density plasma (HDP) etching system are elevated to or close to respective steady state equilibrium temperatures so that scavenger chemistry and rates remain substantially the same on a wafer-to-wafer basis. A relatively inert warm-up plasma is turned on within the HDP chamber during idle time periods that precede or occur between executions of a predefined plasma-processing recipe so as to raise the temperatures of chamber-internal kit parts.

Abstract: The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

Abstract: A vacuum seal assembly that can be used in a plasma etch reactor to seal the chamber interior from the outside environment consists of a protective collar that is injection molded or machined of a high strength, high temperature and corrosion resistant thermoplastic material, the collar has an elastomeric gasket installed therein and is used in combination with a second elastomeric gasket to achieve a fluid-tight seal between two rigid surfaces made of silicon and quartz, respectively.

Abstract: The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

Abstract: A clamp ring for use in a thermal reactor for processing a semiconductor wafer. The reactor includes a domed pedestal for supporting the wafer and controlling its temperature, and a clamp ring which includes an annular seat formed therein, for receiving and holding down the periphery of the wafer onto the domed pedestal. The seat formed in the clamp ring supports a ring of spheres which, in operation, engage and hold down the periphery of the wafer. Each sphere is rotationally supported in a pocket formed in the body of the clamp ring. A portion of each sphere protrudes beyond the seat so that the wafer's surface is contacted by the convex surface of the sphere. This keeps the wafer's surface and any sharp edges on the seat apart, thereby reducing damage of the wafer's surface by the seat. As the spheres are able to rotate in the pockets and therefore roll on the surface of the wafer, the chances of the damaging the wafer's surface are further reduced.

Abstract: A method of removing complexed zinc-cyanide from wastewater involving a multiple stage process including, in a first step, control of ferrous ions to a critical minimum concentration of 250 to 400 ppm, together with pH control in the first and also a second step, together with recycling of a portion of sludge precipitated in the process. Improved sludge stability is achieved by aeration to oxidize precipitated ferrous hydroxide to ferric hydroxide, immediately before settling the sludge in a thickener.

Abstract: A method of removing complexed zinc-cyanide from wastewater involving a multiple stage process including, in a first step, control of ferrous ions to a critical minimum concentration of 250 to 400 ppm, together with pH control in the first and also a second step, together with recycling of a portion of sludge precipitated in the process.