Abstract: A multi-zone temperature testing system includes a test device having components, a multi-zone temperature testing device that is coupled to the test device and that includes a first thermoelectric module that is located adjacent a first subset of the components and a second thermoelectric module that is located adjacent a second subset of the components, and a temperature control subsystem that is coupled to the multi-zone temperature testing device. The temperature control subsystem controls the first thermoelectric module in the multi-zone temperature testing device to produce a first heat flux that provides a testing temperature for the first subset of the components, and controls the second thermoelectric module in the multi-zone temperature testing device to produce a second heat flux that is different than the first heat flux and that provides the testing temperature for the second subset of the components.

Abstract: A data retention event preparation/recovery system includes a chassis, a plurality of NAND subsystems included in the chassis, and a data retention event preparation/recovery subsystem that is included in the chassis and coupled to the plurality of NAND subsystems. The data retention event preparation/recovery subsystem determines that the plurality of NAND subsystems will experience a data retention event and, in response, identifies a first subset of the plurality of NAND subsystems that exceed an error threshold, identifies at least one overprovisioned block in the plurality of NAND subsystem, copies data that is stored on the first subset of the plurality of NAND subsystems to the at least one overprovisioned block in the plurality of NAND subsystems, and power offs the plurality of NAND subsystems to begin the data retention event.

Abstract: A data retention event preparation/recovery system includes a chassis, a plurality of NAND subsystems included in the chassis, and a data retention event preparation/recovery subsystem that is included in the chassis and coupled to the plurality of NAND subsystems. The data retention event preparation/recovery subsystem determines that the plurality of NAND subsystems will experience a data retention event and, in response, identifies a first subset of the plurality of NAND subsystems that exceed an error threshold, identifies at least one overprovisioned block in the plurality of NAND subsystem, copies data that is stored on the first subset of the plurality of NAND subsystems to the at least one overprovisioned block in the plurality of NAND subsystems, and power offs the plurality of NAND subsystems to begin the data retention event.

Abstract: A multi-zone temperature testing system includes a test device having components, a multi-zone temperature testing device that is coupled to the test device and that includes a first thermoelectric module that is located adjacent a first subset of the components and a second thermoelectric module that is located adjacent a second subset of the components, and a temperature control subsystem that is coupled to the multi-zone temperature testing device. The temperature control subsystem controls the first thermoelectric module in the multi-zone temperature testing device to produce a first heat flux that provides a testing temperature for the first subset of the components, and controls the second thermoelectric module in the multi-zone temperature testing device to produce a second heat flux that is different than the first heat flux and that provides the testing temperature for the second subset of the components.

Abstract: A temperature-accelerated solid-state storage testing method includes writing data to a storage system and subjecting the storage system to a first temperature range for a first time period that is equivalent to operation at a lower/second temperature for a greater/second time period. Subsequently, the data from the storage system is read within a third time period at a third temperature range to generate first test data. The storage system is then subjected to the first temperature range for a fourth time period that was reduced relative to the first time period based on the reading of the data to generate the first test data causing the operation of storage system to be equivalent to operating at the second temperature range for a fifth time period. Subsequently the data from the storage system is read within the third time period at the third temperature range to generate second test data.

Abstract: A modular test system includes a modular controller subsystem coupled to a modular tested subsystem by a modular intermediary subsystem. The modular intermediary subsystem transmits communications between the modular controller subsystem and the modular tested subsystem during testing operations performed by the modular controller subsystem, and performs at least one testing function that is not available in the modular controller subsystem during the testing operations performed by the modular controller subsystem.

Abstract: A temperature-accelerated solid-state storage testing method includes writing data to a storage system and subjecting the storage system to a first temperature range for a first time period that is equivalent to operation at a lower/second temperature for a greater/second time period. Subsequently, the data from the storage system is read within a third time period at a third temperature range to generate first test data. The storage system is then subjected to the first temperature range for a fourth time period that was reduced relative to the first time period based on the reading of the data to generate the first test data causing the operation of storage system to be equivalent to operating at the second temperature range for a fifth time period. Subsequently the data from the storage system is read within the third time period at the third temperature range to generate second test data.

Abstract: A storage device reclassification system includes a storage device reclassification subsystem coupled to a storage device that has a NAND storage subsystem and that is configured to perform first storage operations associated with a first storage device classification. The storage device reclassification subsystem performs testing operations on the NAND storage subsystem and, based on the testing operations, identifies at least one reduced capability of the NAND storage subsystem. Based on the at least one reduced capability of the NAND storage subsystem, the storage device reclassification subsystem determines at least one storage device operation modification and performs the at least one storage device operation modification on the storage device in order to configure the storage device to perform second storage operations that are different than the first storage operations and that are associated with a second storage device classification that is different than the first storage device classification.

Abstract: In general, embodiments of the invention relate tracking the operating temperature of the solid-state memory modules (SSMMs) in order to improve their performance.

Abstract: In general, embodiments of the invention relate tracking the operating temperature of the solid-state memory modules (SSMMs) in order to improve their performance.

Abstract: A method for reading data from persistent storage. The method includes receiving a client read request for data from a client. The client read request includes a logical address. The method further includes determining a physical address corresponding to the logical address, determining that the physical address is directed to an open block in the persistent storage and determining that the physical address is directed to a last closed word line of the open block. The method further includes, based on these determinations, obtaining at least one read threshold value for the reading from last closed word lines, issuing a control module read request comprising the at least one read threshold value to a storage module that includes the open block, and obtaining the data from the open block using the at least one read threshold value.