Patents by Inventor Michael Rub
Michael Rub has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9711621Abstract: A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.Type: GrantFiled: July 30, 2014Date of Patent: July 18, 2017Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
-
Publication number: 20140332885Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: ApplicationFiled: July 30, 2014Publication date: November 13, 2014Inventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
-
Patent number: 8815686Abstract: A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.Type: GrantFiled: March 14, 2013Date of Patent: August 26, 2014Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaeffer
-
Patent number: 8492771Abstract: A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate.Type: GrantFiled: September 27, 2007Date of Patent: July 23, 2013Assignee: Infineon Technologies Austria AGInventors: Michael Rüb, Michael Treu, Armin Willmeroth, Franz Hirler
-
Patent number: 8431988Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: GrantFiled: October 28, 2005Date of Patent: April 30, 2013Assignee: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rüb, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schäffer
-
Patent number: 7459365Abstract: The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.Type: GrantFiled: September 29, 2006Date of Patent: December 2, 2008Assignee: Infineon Technologies Austria AGInventors: Michael Rüb, Herbert Schäfer, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier, Roland Rupp, Manfred Pippan, Hans Weber, Frank Pfirsch, Franz Hirler, Hans-Joachim Schulze
-
Publication number: 20070108513Abstract: The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.Type: ApplicationFiled: September 29, 2006Publication date: May 17, 2007Applicant: Infineon Technologies Austria AGInventors: Michael Rub, Herbert Schafer, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier, Roland Rupp, Manfred Pippan, Hans Weber, Frank Pfirsch, Franz Hirler, Hans-Joachim Schulze
-
Publication number: 20060118862Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.Type: ApplicationFiled: October 28, 2005Publication date: June 8, 2006Applicant: Infineon Technologies AGInventors: Franz Hirler, Uwe Wahl, Thorsten Meyer, Michael Rub, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Carsten Schaffer
-
Patent number: 6649459Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.Type: GrantFiled: March 26, 2001Date of Patent: November 18, 2003Assignee: Infineon Technologies AGInventors: Gerald Deboy, Wolfgang Friza, Oliver Häberlen, Michael Rüb, Helmut Strack
-
Publication number: 20010053568Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.Type: ApplicationFiled: March 26, 2001Publication date: December 20, 2001Inventors: Gerald Deboy, Wolfgang Friza, Oilver Haberlen, Michael Rub, Helmut Strack
-
Patent number: 4887916Abstract: The disclosed clamping plate exhibits a particularly great spring action and it includes a clamping rim (10) and with spring tabs (20) which point radially inward and against which the cups of the self-aligning or cup-type bearing make contact. According to the invention the spring tabs (20) are particularly long and extend from the clamping rim (10). The tabs also bend inwardly over a bead (9) limiting the clamping rim (10). An especially inexpensive design from the aspect of production engineering and assembly is achieved in that the transition from the bead (9) to the plug-in hole (2) is rounded in the plug-in direction (6) of the clamping plate and the lower area of the bead (9) is designed as oil collecting groove.Type: GrantFiled: September 23, 1988Date of Patent: December 19, 1989Assignee: Siemens AktiengesellschaftInventors: Peter Adam, Ferdinand Hoffmann, Michael Rub