Abstract: An example apparatus includes a sensor to detect a lateral edge of a door curtain within a guide of a door, and a controller to identify when the door curtain transitions from an operational state to a breakaway state based on a signal from the sensor, the operational state corresponding to when the lateral edge of the door curtain is enclosed by the guide as the door curtain moves between open and closed positions, and the breakaway state corresponding to when a portion of the lateral edge of the door curtain below an upper end of the guide breaks away from the guide.

Abstract: An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of the first conductivity type. A semiconductor of a second conductivity type is disposed within the channel adjacent the region of the first conductivity type such that the region of the first conductivity type and the semiconductor of the second conductivity type form a diode. At least one of the region of the first conductivity type and the semiconductor of the second conductivity type is electrically coupled to the structure to be protected.

Abstract: An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of the first conductivity type. A semiconductor of a second conductivity type is disposed within the channel adjacent the region of the first conductivity type such that the region of the first conductivity type and the semiconductor of the second conductivity type form a diode. At least one of the region of the first conductivity type and the semiconductor of the second conductivity type is electrically coupled to the structure to be protected.