Patents by Inventor Michael S. Baird

Michael S. Baird has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon
    Patent number: 5369300
    Abstract: A semiconductor device aluminum-containing metallization system that is particularly useful for integrated circuits (ICs) having P-type contact regions and also having a likelihood of extended exposure to elevated temperatures. Use of an aluminum/silicon diffusion barrier formed of an amorphous tungsten/silicon on such ICs is made commercially practical. A titanium or transition metal silicide layer is disposed beneath the amorphous tungsten/silicon layer, to consistently provide durable low resistance electrical contacts to P-type regions of the IC.
    Type: Grant
    Filed: June 10, 1993
    Date of Patent: November 29, 1994
    Assignee: Delco Electronics Corporation
    Inventors: Robert J. Heideman, Randy A. Rusch, Michael S. Baird