Abstract: Disclosed herein are compounds and compositions useful in the treatment of GLS1 mediated diseases, such as cancer, having the structure of Formula I: Methods of inhibition GLS1 activity in a human or animal subject are also provided.

Abstract: A system for thermoregulatory sweat testing of a subject includes a chamber for accommodating the subject, the chamber having a heating device for operably elevating the core body temperature of the subject to a target temperature so as to induce sweating over a skin surface of the subject; a cooling device for operably creating forced evaporative cooling of the skin surface of the subject after the core body temperature of the subject is elevated to the target temperature; an imaging device for acquiring images of the subject at different times, each image having imaged pixels, the imaging device including one or more infrared cameras, one or more infrared sensors, or a combination of them; and a controller coupled with the chamber and the imaging device for controlling operations of the chamber and the imaging device and processing the acquired images to determine skin surface sweat distributions of the subject.

Abstract: A system for thermoregulatory sweat testing of a subject includes a chamber for accommodating the subject, the chamber having a heating device for operably elevating the core body temperature of the subject to a target temperature so as to induce sweating over a skin surface of the subject; a cooling device for operably creating forced evaporative cooling of the skin surface of the subject after the core body temperature of the subject is elevated to the target temperature; an imaging device for acquiring images of the subject at different times, each image having imaged pixels, the imaging device including one or more infrared cameras, one or more infrared sensors, or a combination of them; and a controller coupled with the chamber and the imaging device for controlling operations of the chamber and the imaging device and processing the acquired images to determine skin surface sweat distributions of the subject.

Abstract: A method for electromagnetically shielding circuits which combine to form an integrated circuit device provides isolated silicon islands surrounded laterally and subjacently by conductive material. The isolated silicon islands may be covered individually or as a group by a conductive cover. The integrated circuit may include at least one silicon island including an analog circuit and at least one silicon island including a digital circuit, the analog and digital circuits electromagnetically shielded from one another. The method for forming the structure includes providing a first semiconductor substrate and hydrophilically bonding a substructure to the first semiconductor substrate. The substructure includes the isolated silicon islands surrounded by the conductive material. The substructure may be formed on a second semiconductor substrate by implanting an impurity region into an upper portion of the second semiconductor substrate.

Abstract: A method for electromagnetically shielding circuits which combine to form an integrated circuit device provides isolated silicon islands surrounded laterally and subjacently by conductive material. The isolated silicon islands may be covered individually or as a group by a conductive cover. The integrated circuit may include at least one silicon island including an analog circuit and at least one silicon island including a digital circuit, the analog and digital circuits electromagnetically shielded from one another. The method for forming the structure includes providing a first semiconductor substrate and hydrophilically bonding a substructure to the first semiconductor substrate. The substructure includes the isolated silicon islands surrounded by the conductive material. The substructure may be formed on a second semiconductor substrate by implanting an impurity region into an upper portion of the second semiconductor substrate.

Abstract: A bipolar vertical PNP transistor compatible with CMOS processing and useful in a complementary BiMOS structure is characterized in that it is devoid of an epitaxial layer and employs a high-energy implanted phosphorus layer to provide N-type substrate isolation.