Patents by Inventor Michael S. Jackson
Michael S. Jackson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11735420Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.Type: GrantFiled: September 8, 2020Date of Patent: August 22, 2023Assignee: Applied Materials, Inc.Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
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Patent number: 11515155Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.Type: GrantFiled: March 10, 2021Date of Patent: November 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Chang Ke, Michael S. Jackson, Liqi Wu, Lei Zhou, Shuyi Zhang, David Thompson, Paul F. Ma, Biao Liu, Cheng Pan
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Publication number: 20210283650Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.Type: ApplicationFiled: June 1, 2021Publication date: September 16, 2021Applicant: Applied Materials, Inc.Inventors: Chang Ke, Song-Moon Suh, Liqi Wu, Michael S. Jackson, Lei Zhou, Biao Liu, Cheng Pan, Paul F. Ma, Mei Chang
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Publication number: 20210217615Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.Type: ApplicationFiled: March 10, 2021Publication date: July 15, 2021Applicant: Applied Materials, Inc.Inventors: Chang Ke, Michael S. Jackson, Liqi Wu, Lei Zhou, Shuyi Zhang, David Thompson, Paul F. Ma, Biao Liu, Cheng Pan
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Patent number: 11033930Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.Type: GrantFiled: January 8, 2019Date of Patent: June 15, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Chang Ke, Song-Moon Suh, Liqi Wu, Michael S. Jackson, Lei Zhou, Biao Liu, Cheng Pan, Paul F. Ma, Mei Chang
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Patent number: 10950433Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.Type: GrantFiled: November 16, 2018Date of Patent: March 16, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Chang Ke, Michael S. Jackson, Liqi Wu, Lei Zhou, Shuyi Zhang, David Thompson, Paul F. Ma, Biao Liu, Cheng Pan
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Publication number: 20200402792Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.Type: ApplicationFiled: September 8, 2020Publication date: December 24, 2020Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
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Patent number: 10770292Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.Type: GrantFiled: June 14, 2018Date of Patent: September 8, 2020Assignee: Applied Materials, Inc.Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
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Patent number: 10643840Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.Type: GrantFiled: September 12, 2018Date of Patent: May 5, 2020Assignee: Applied Materials, Inc.Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
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Patent number: 10593521Abstract: Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.Type: GrantFiled: March 12, 2013Date of Patent: March 17, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Larry Frazier, Cheng-Hsiung Matthew Tsai, John C. Forster, Mei Po Yeung, Michael S. Jackson
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Publication number: 20190326114Abstract: Methods for treating a substrate including: contacting a substrate having a top surface with a first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) precursor, a co-reactant, and a second SAM precursor or a second SMM precursor to form a first layer on the top surface. Selective deposition methods are also disclosed.Type: ApplicationFiled: April 11, 2019Publication date: October 24, 2019Inventors: JESSICA S. KACHIAN, JUKKA TANSKANEN, WENYU ZHANG, MICHAEL S. JACKSON, CHANG KE, LIQI WU
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Publication number: 20190210061Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.Type: ApplicationFiled: January 8, 2019Publication date: July 11, 2019Inventors: Chang Ke, Song-Moon Suh, Liqi Wu, Michael S. Jackson, Lei Zhou, Biao Liu, Cheng Pan, Paul F. Ma, Mei Chang
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Publication number: 20190157079Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.Type: ApplicationFiled: November 16, 2018Publication date: May 23, 2019Inventors: Chang Ke, Michael S. Jackson, Liqi Wu, Lei Zhou, Shuyi Zhang, David Thompson, Paul F. Ma, Biao Liu, Cheng Pan
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Publication number: 20190080904Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.Type: ApplicationFiled: September 12, 2018Publication date: March 14, 2019Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
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Publication number: 20180366317Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.Type: ApplicationFiled: June 14, 2018Publication date: December 20, 2018Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
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Publication number: 20140262043Abstract: Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.Type: ApplicationFiled: March 12, 2013Publication date: September 18, 2014Applicant: APPLIED MATERIALS, INC.Inventors: LARRY FRAZIER, CHENG-HSIUNG MATTHEW TSAI, JOHN C. FORSTER, MEI PO YEUNG, MICHAEL S. JACKSON
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Patent number: 8637410Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.Type: GrantFiled: April 8, 2011Date of Patent: January 28, 2014Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, John C. Forster, Seshadri Ganguli, Michael S. Jackson, Xinliang Lu, Wei W. Wang, Xinyu Fu, Yu Lei
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Publication number: 20120258602Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.Type: ApplicationFiled: April 8, 2011Publication date: October 11, 2012Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, John C. Forster, Seshadri Ganguli, Michael S. Jackson, Xinliang Lu, Wei W. Wang, Xinyu Fu, Yu Lei
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Patent number: 7705275Abstract: A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.Type: GrantFiled: August 17, 2006Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Gwo-chun Tzu, Xiangxiong (John) Yuan, Michael S. Jackson, Hymam Lam
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Patent number: 6057244Abstract: Method for processing a semiconductor substrate in a chamber comprising the steps of establishing preprocess conditions in the chamber, executing a two-step plasma ignition, processing the substrate, executing a two-step plasma power down and executing a two-step substrate dechuck. A "softer" ignition of a plasma in two steps reduces DC bias spikes on the substrate. Reducing DC bias spikes reduces processing anomalies such as excess charge retention in the wafer after removing the chucking voltage and wafer repulsion and plasma discontinuity during processing. Additionally, the plasma ramp down after processing allows adequate time for discharging of residual charges in the wafer which allows for more reliable removal of the substrate from the chamber (dechucking).Type: GrantFiled: July 31, 1998Date of Patent: May 2, 2000Assignee: Applied Materials, Inc.Inventors: Gilbert Hausmann, Vijay Parkhe, Chia-Ao Lu, Michael S. Jackson