Patents by Inventor Michael S. Kang
Michael S. Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9613834Abstract: A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at a lower end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface.Type: GrantFiled: March 26, 2010Date of Patent: April 4, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Leonard J. Sharpless, Harmeet Singh, Michael S. Kang
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Publication number: 20140367047Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.Type: ApplicationFiled: August 27, 2014Publication date: December 18, 2014Inventors: Michael S. Kang, Michael C. Kellogg, Miguel A. Saldana, Travis R. Taylor
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Patent number: 8859432Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.Type: GrantFiled: October 31, 2012Date of Patent: October 14, 2014Assignee: Lam Research CorporationInventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
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Patent number: 8845856Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.Type: GrantFiled: December 1, 2010Date of Patent: September 30, 2014Assignee: Lam Research CorporationInventors: Michael S. Kang, Michael C. Kellogg, Migùel A. Saldana, Travis R. Taylor
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Patent number: 8313635Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.Type: GrantFiled: September 1, 2010Date of Patent: November 20, 2012Assignee: Lam Research CorporationInventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
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Publication number: 20110126984Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.Type: ApplicationFiled: December 1, 2010Publication date: June 2, 2011Applicant: Lam Research CorporationInventors: Michael S. Kang, Michael C. Kellogg, Mlgúel A. Saldana, Travis R. Taylor
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Publication number: 20100319813Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.Type: ApplicationFiled: September 1, 2010Publication date: December 23, 2010Applicant: Lam Research CorporationInventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
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Patent number: 7811409Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.Type: GrantFiled: November 29, 2007Date of Patent: October 12, 2010Assignee: Lam Research CorporationInventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel
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Publication number: 20100243164Abstract: A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface.Type: ApplicationFiled: March 26, 2010Publication date: September 30, 2010Applicant: Lam Research CorporationInventors: Leonard J. Sharpless, Harmeet Singh, Michael S. Kang
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Publication number: 20080178906Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.Type: ApplicationFiled: November 29, 2007Publication date: July 31, 2008Inventors: Fred D. Egley, Michael S. Kang, Anthony L. Chen, Jack Kuo, Hong Shih, Duane Outka, Bruno Morel