Abstract: According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Abstract: According to various implementations of the invention, high quality a-axis XBCO may be grown with low surface roughness. According to various implementations of the invention, low surface roughness may be obtained by: 1) adequate substrate preparation; 2) calibration of flux rates for constituent atoms; and/or 3) appropriate control of temperature during crystal growth. According to various implementions of the invention, a wafer comprises a smoothing layer of c-axis XBCO; a first conducting layer of a-axis XBCO formed on the smoothing layer; an insulating layer formed on the first conducting layer; and a second conducting layer of a-axis XBCO formed on the insulating layer, where, for a same surface roughness, a thickness of the smoothing layer and the first conducting layer combined is greater than a thickness of the first conducting layer without the smoothing layer.

Abstract: According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Abstract: According to various implementations of the invention, high quality a-axis XBCO may be grown with low surface roughness. According to various implementations of the invention, low surface roughness may be obtained by: 1) adequate substrate preparation; 2) calibration of flux rates for constituent atoms; and/or 3) appropriate control of temperature during crystal growth. According to various implementations of the invention, a wafer comprises a smoothing layer of c-axis XBCO; a first conducting layer of a-axis XBCO formed on the smoothing layer; an insulating layer formed on the first conducting layer; and a second conducting layer of a-axis XBCO formed on the insulating layer, where, for a same surface roughness, a thickness of the smoothing layer and the first conducting layer combined is greater than a thickness of the first conducting layer without the smoothing layer.

Abstract: According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Abstract: According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Abstract: According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Abstract: According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Abstract: The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.

Abstract: The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

Abstract: The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

Abstract: An electro-optic package comprising an optoelectric module with a receptacle assembly, an optoelectric assembly fixedly attached to the receptacle assembly, the optoelectric assembly being in communication with the optoelectric module, wherein the optoelectric assembly includes optoelectronic circuitry and the optoelectronic circuitry includes at least one electrical connection for communication with external electronic circuitry, and wherein the electro-optic package forms a discrete package.

Abstract: An actuator-based latching/delatching mechanism in combination with an optical module includes a housing having a front face with an opening and an optical transceiver designed to be nestingly engaged in the opening. A front surface of the transceiver is flush with the face of the housing in a fully nestingly engaged orientation. A pivot arm is pivotally mounted adjacent a rear end of the housing for pivotal movement between a latching orientation in which the transceiver is fully nestingly engaged in the housing and a delatching orientation in which a force pivots the arm against the transceiver to move the transceiver out of the engaged orientation. An actuator, with an end accessible exterior of the housing, is mounted in the housing for movements from latching to delatching orientations in response to a force applied to the end of the actuator.

Abstract: An optoelectric module includes a cylindrical ferrule defining an optical axis and having a first end constructed to receive an optical fiber aligned along the optical axis. A TO-can is positioned within the ferrule and has a first end with an optical element therein for conducting light therethrough. A base is affixed to the second end of the TO-can and to the second end of the ferrule. A laser is mounted within the TO-can so that light generated by the laser is directed through the optical element along the optical axis. A laser driver is mounted on the base and electrically connected to the laser. External connections to the laser driver are completed by either electrical traces on a surface of the base, vias through the base, or flexible leads mounted on the base.

Abstract: An optoelectric module includes a cylindrical ferrule defining an optical axis and having a first end constructed to receive an optical fiber aligned along the optical axis. An optical element, including a lens, is engaged in the ferrule between the first and second ends and positioned to convey light along the optical axis. The second end of the ferrule is closed by a base. An optical component is mounted on the base so that light is directed through the lens from the optical component to the optical fiber or from the optical fiber to the optical component. Either a laser driver or an amplifier is mounted on the base and electrically connected to the optical component and external connections are made to the laser driver or the amplifier by electrical traces on a surface of the base, vias through the base, or flex leads mounted on the base.

Abstract: A portable communications transceiver having a first hollow body, a second hollow body, and a virtual image display that includes a semiconductor array providing a real image and an optical system mounted in the second body to receive the real image and produce a virtual image at a viewing aperture. Electronics are associated with the array to produce real images in accordance with messages and graphical images received by the receiver. The display is sufficiently small enough to mount in a hand held cellular or portable telephone by the operator while using the telephone.

Abstract: A perishable media information storage mechanism, including a substrate, a data layer for recording data thereon the information storage mechanism, a reflective layer, and a protective lacquer coating. The data layer includes a material responsive to at least one predetermined data elimination factor and includes one of a decayable dye material, a liquid crystal material, a photosensitive material or a plurality of magnetoresistive memory cells. The data layer is characterized as recording data and eliminating access to data in response to at least one of a predetermined use or time factor. In addition, included is a method for fabricating a perishable media information storage mechanism including the steps of providing a substrate, forming a data layer on a surface of the substrate, forming a reflective layer on an uppermost surface of the data layer, and forming a protective coating on an uppermost surface of the reflective layer.

Abstract: A portable electronic device adapted to be worn on a user's wrist including an electronic unit including a transceiver for receiving and transmitting messages and a watch included within the electronic unit having movements for displaying a time of day. A wrist band including a plurality of electrically conductive fibers is electrically coupled to the electronic unit thereby creating an electronic circuit. A power source is integrated with the plurality of electrically conductive fibers fabricating the wrist band. At least one display is integrated with the electronic unit for the display of informative data.

Abstract: A perishable media system including a media writer for writing information to a perishable media information storage mechanism, a media reader for reading information written on the perishable media information storage mechanism, a data access eliminator for eliminating access to the information written on the perishable media information storage mechanism, and an interpretation mechanism. The system operates by writing information to the perishable media information storage mechanism with the media writer, thereafter reading the information with the media reader. Once the information is read by the media reader and interpreted by the interpretation mechanism, the data access eliminator, in the form of a light, magnetic field, or bias eliminates access to the information.

Abstract: A method of fabricating a ridge VCSEL having a first stack of mirrors, a second stack of mirrors and an active area sandwiched therebetween, including the steps of depositing a metal layer, an etchable layer and a masking layer on the second stack, removing portions of the masking layer, the etchable layer and the metal layer to form a mask, using the mask to etch the second stack to form a mesa, removing portions of the etchable layer to expose the metal layer, depositing an additional metal layer on the side of the mesa and the exposed portion of the metal layer to define a light emitting area, removing the etchable and masking layers to expose the metal layer in the light emitting area, and removing the exposed portion of the metal layer to expose the light emitting area.