Abstract: A process for forming a capacitor including the steps of: forming a conductive layer on a capacitor precursor wherein the capacitor precursor has a substrate, a first conductor in electrical contact with the substrate; a second conductor; and a dielectric between the first conductor and the second conductor and also between the second conductor and the substrate; applying a mask to the conductive layer wherein the mask projects to the first conductor and the second conductor; etching the conductive layer which is void of mask to remove a portion of conductive layer; adding a dielectric to an area of removed conductive layer; removing the mask; sintering the dielectric; smoothing a surface of the dielectric and the conductive layer remaining after the etching; and forming an terminal conductive layer in electrical contact with the second conductor and separated from the first conductor by dielectric.