Abstract: A temperature control system to selectively control the temperature of specific areas of the chuck or electrode plate upon which a wafer is mounted during plasma etching, chemical vapor deposition and other such temperature dependent processes for the purpose of ultimately controlling the temperature of the semiconductor wafer. The temperature control system includes a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops. Each conduit is connected to its own inlet and outlet to allow a heating or cooling agent to flow independently through each conduit.

Abstract: A process used during the formation of a semiconductor device comprises the formation of a stack having a substrate, a layer of oxide, a polycrystalline silicon layer, and a photoresist mask. An etch is performed to pattern the polycrystalline silicon layer, then the photoresist is flowed to cover the edges of the polycrystalline silicon. Finally, a doping step is performed using the flowed photoresist as a doping barrier, thus allowing for a distance between the poly and an implanted region in the substrate.

Abstract: A process used during the formation of a semiconductor device comprises the formation of a stack having a substrate, a layer of oxide, a polycrystalline silicon layer, and a photoresist mask. An etch is performed to pattern the polycrystalline silicon layer, then the photoresist is flowed to cover the edges of the polycrystalline silicon. Finally, a doping step is performed using the flowed photoresist as a doping barrier, thus allowing for a distance between the poly and an implanted region in the substrate.