Abstract: A debris removal system for a wire electronic discharge machining (WEDM) apparatus has a fluid source. A pressurization device is coupled to the fluid source to pressurize a fluid from the fluid source. At least one fluid delivery nozzle is coupled to the pressurize device. The at least one fluid delivery nozzle is positioned behind a wire electrode of the WEDM apparatus and approximately perpendicular to the wire electrode to inject the pressurized fluid directly into an active cutting area between the wire and work piece.

Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: Spent sputtering targets are refurbished by filling the depleted region of the target with new sputter material using a hot isostatic pressing or HIP'ing technique.

Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: Sputtering targets are produced which have an intermetallic stoichiometry which makes them ductile enough for maching and sputtering. The targets are produced from elemental or alloy powders or alloys, at least one of which is of very fine particle size, e.g., −400 mesh. The elemental or alloy powders are blended, canned, subjected to hot isostatic pressing at low temperatures and high pressures, formed into a billet, and machined to form the target.

Abstract: Spent sputtering targets are refurbished by filling the depleted region of the target with new sputter material using a hot isostatic pressing or HIP'ing technique.

Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: The disclosure of this invention relates to calorimeters and a process for operating a colorimeter. The colorimeter of the disclosure is controlled by a microprocessor which evaluates a predetermined radiation absorption curve for each sample. This is to be contrasted with the prior art wherein the test on a given sample evaluates only radiation absorption concentration points which are evaluated by the microprocessor. The colorimeter gives more accurate readings as a result of the fact that an absorption curve and its parameters are evaluated for each sample. The calorimeter uses multiple LEDs as a radiation source. The microprocessor further controls other functions of the colorimeter. A separate microprocessor may be used to control these other functions. The calorimeter and process of this invention are also useful in the analysis of samples for turbidity.