Patents by Inventor Michael Santiago Cox

Michael Santiago Cox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In situ application of etch back for improved deposition into high-aspect-ratio features
    Patent number: 7399707
    Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
    Type: Grant
    Filed: January 13, 2005
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
  • In situ application of etch back for improved deposition into high-aspect-ratio features
    Patent number: 6869880
    Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
    Type: Grant
    Filed: January 24, 2002
    Date of Patent: March 22, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
  • Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
    Patent number: 6863019
    Abstract: A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: March 8, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Shamouil Shamouilian, Canfeng Lai, Michael Santiago Cox, Padmanabhan Krishnaraj, Tsutomu Tanaka, Sebastien Raoux, Peter I. Porshnev, Thomas Nowak
  • In situ application of etch back for improved deposition into high-aspect-ratio features
    Publication number: 20030136332
    Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
    Type: Application
    Filed: January 24, 2002
    Publication date: July 24, 2003
    Applicant: APPLIED MATERIALS INC., A Delaware corporation
    Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
  • Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
    Publication number: 20030036272
    Abstract: A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.
    Type: Application
    Filed: May 30, 2002
    Publication date: February 20, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Shamouil Shamouilian, Canfeng Lai, Michael Santiago Cox, Padmanabhan Krishnaraj, Tsutomu Tanaka, Sebastien Raoux, Peter I. Porshnev, Thomas Nowak
  • Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
    Patent number: 6364958
    Abstract: A plasma assisted semiconductor substrate processing chamber having a plurality of electrically conductive bridges for preventing electrical arcing in the chamber. More particularly, the chamber has a plurality of electrically conductive bridges that connect a portion of a substrate support member with a portion of the chamber walls.
    Type: Grant
    Filed: May 24, 2000
    Date of Patent: April 2, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Canfeng Lai, Michael Santiago Cox, Michael Barnes, Lily L. Pang