Abstract: Ultra-compact inductor devices for use in integrated circuits (e.g., RF ICs) that use 3-dimensional Dirac materials for providing the inductor. Whereas inductors currently require significant real estate on an integrated circuit, because they require use of an electrically conductive winding around an insulative core, or such metal deposited in a spiral geometry, the present devices can be far more compact, occupying significantly less space on an integrated circuit. For example, an ultra-compact inductor that could be included in an integrated circuit may include a 3-dimensional Dirac material formed into a geometric shape capable of inductance (e.g., as simple as a stripe or series of stripes of such material), deposited on a substantially non-conductive (i.e., insulative) substrate, on which the Dirac material in the selected geometric shape is positioned. Low temperature manufacturing methods compatible with CMOS manufacturing are also provided.

Abstract: Ultra-compact inductor devices for use in integrated circuits (e.g., RF ICs) that use 3-dimensional Dirac materials for providing the inductor. Whereas inductors currently require significant real estate on an integrated circuit, because they require use of an electrically conductive winding around an insulative core, or such metal deposited in a spiral geometry, the present devices can be far more compact, occupying significantly less space on an integrated circuit. For example, an ultra-compact inductor that could be included in an integrated circuit may include a 3-dimensional Dirac material formed into a geometric shape capable of inductance (e.g., as simple as a stripe or series of stripes of such material), deposited on a substantially non-conductive (i.e., insulative) substrate, on which the Dirac material in the selected geometric shape is positioned. Low temperature manufacturing methods compatible with CMOS manufacturing are also provided.

Abstract: A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2? in solution such that a CdTe film is adherently formed directly on the substrate.

Abstract: A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2? in solution such that a CdTe film is adherently formed directly on the substrate.