Abstract: Methods for forming bilayer hardmasks are disclosed as well as methods for forming semiconductor structure using such bilayer hardmasks. The methods disclosed include performing a first cyclical deposition process to form a first hardmask layer and performing a second cyclical deposition process to form a second hardmask layer directly on the first hardmask layer. The methods also include forming CMOS structures using a bilayer hardmask.

Abstract: A source vessel for use in a semiconductor processing system to supply precursor materials by providing enhanced control over vapor pressures. The source vessel includes a housing or vessel defining a chamber for holding a volume of precursor in a liquid state. The source vessel further includes a temperature sensor configured to detect a temperature of a surface of the liquid-state precursor that is presently contained within the chamber of the housing. The temperature sensor may take the form of a temperature measurement device such as a thermocouple on a float or a non-contact temperature measurement device such as an infrared (IR) temperature sensor with a line-of-sight to the liquid's surface.

Abstract: Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.

Abstract: A susceptor assembly includes a heater pedestal and a cap coupled to the heater pedestal. The cap can include one or mor through holes to facilitate purging and/or reduce dead volumes associated with the susceptor assemblies. Reactor systems including such assemblies are also disclosed.

Abstract: Various embodiments of the present technology may provide a system and apparatus for reaction chamber. The system and apparatus may contain a reaction chamber having a spacer plate disposed between a lower chamber of the reaction chamber and a showerhead. An active heating element may be embedded within the spacer plate. A flow control ring, disposed adjacent to the spacer plate, is heated by conduction from the spacer plate heating element.

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Abstract: A semiconductor processing device comprises a susceptor assembly comprising a wafer support configured to support a wafer. The wafer support comprises a wafer support body configured to support the wafer, a purge channel extending laterally from an inner portion of the wafer support body to an outer portion of the wafer support body, a first plenum channel disposed at the outer portion of the wafer support and in fluid communication with the purge channel, and an outlet to deliver purge gas to an edge of the wafer, the outlet in fluid communication with the first plenum channel, a purge gas supply hole on a surface opposite to the wafer support body. The purge gas supply hole is in fluid communication with the purge channel, and a plurality of first purge holes fluidly communicated with the first plenum channel and the purge channel.

Abstract: A source vessel for use in a semiconductor processing system to supply precursor materials by providing enhanced control over vapor pressures. The source vessel includes a housing or vessel defining a chamber for holding a volume of precursor in a liquid state. The source vessel further includes a temperature sensor configured to detect a temperature of a surface of the liquid-state precursor that is presently contained within the chamber of the housing. The temperature sensor may take the form of a temperature measurement device such as a thermocouple on a float or a non-contact temperature measurement device such as an infrared (IR) temperature sensor with a line-of-sight to the liquid's surface.

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Abstract: The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

Abstract: A reaction system for processing semiconductor substrates is disclosed. In particular, the invention discloses an arrangement of a susceptor and a baseplate for when a substrate is placed into a reaction region. Magnets are embedded into the susceptor and the baseplate in order to create a gap between the two. As a result of the gap, the invention prevents an accumulation of gaseous materials that would exist in prior art systems as well as particle generation due to physical contact between parts.

Abstract: A reaction system for processing semiconductor substrates is disclosed. The reaction system includes a susceptor for holding the substrate as well as a baseplate as a part of housing for the reaction system. A pin located on the susceptor can interact with a baseplate feature located on the baseplate to result in a variable gap between the susceptor and the baseplate. The baseplate feature may take the form of a series of steps, a wedge, or a milled-out feature.

Abstract: A reaction system for processing semiconductor substrates is disclosed. The reaction system includes a susceptor for holding the substrate as well as a baseplate as a part of housing for the reaction system. A pin located on the susceptor can interact with a baseplate feature located on the baseplate to result in a variable gap between the susceptor and the baseplate. The baseplate feature may take the form of a series of steps, a wedge, or a milled-out feature.

Abstract: A reaction system for processing semiconductor substrates is disclosed. In particular, the invention discloses an arrangement of a susceptor and a baseplate for when a substrate is placed into a reaction region. Magnets are embedded into the susceptor and the baseplate in order to create a gap between the two. As a result of the gap, the invention prevents an accumulation of gaseous materials that would exist in prior art systems as well as particle generation due to physical contact between parts.