Abstract: In various embodiments, the present disclosure provides a wall panel blocking bracket including a first base, a first stud side engager connected to and extending upwardly from the first base, a second stud side engager connected to and extending upwardly from the first base, a second base connected to the first stud side engager, a third base connected to the second stud side engager, a first hook extending transversely from the first stud side engager, a second hook extending transversely from the second stud side engager, all configured to partially support a wooden block adjacent to a support beam in any one of a perpendicular orientation, a first position parallel orientation, and a second different position parallel orientation.

Abstract: In various embodiments, the present disclosure provides a wall panel blocking bracket including a first base, a first stud side engager connected to and extending upwardly from the first base, a second stud side engager connected to and extending upwardly from the first base, a second base connected to the first stud side engager, a third base connected to the second stud side engager, a first hook extending transversely from the first stud side engager, a second hook extending transversely from the second stud side engager, all configured to partially support a wooden block adjacent to a support beam in any one of a perpendicular orientation, a first position parallel orientation, and a second different position parallel orientation.

Abstract: A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped (“delta doped”) layer. A trench is formed in the delta doped layer to define a gate region.

Abstract: A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped (“delta doped”) layer. A trench is formed in the delta doped layer to define a gate region.