Abstract: A mobile device includes a cellular transceiver for accessing a cellular network and a femtocell module for accessing a broadband network through a femtocell. The mobile device determines whether the mobile device is within range of the femtocell. The mobile device accessing the femtocell to provide telephone service using the mobile device when the mobile device is within range of the femtocell.

Abstract: A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

Abstract: A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

Abstract: A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

Abstract: An electrostatic clamp for dielectric substrates is operated with a low voltage electric source by reducing the width of electrode lines to less than 100 .mu.m and by reducing the spacing between adjacent electrode lines to less than 100 .mu.m. The electrostatic clamp includes an array of electrodes such as aluminum formed on a base of insulating material such as glass and covered by an insulating layer such as nitride which covers and protects the electrodes. Electrical contacts apply voltages of opposite polarities to alternating electrode lines to create a non-uniform electric field which causes a dielectric substrate to be pulled toward the region of highest electric field. The reduced width electrode lines and spacings are created by the use of micro-lithographic techniques including thin film deposition and etching for formation of the electrode and the coating layers.

Abstract: An electrostatic clamping apparatus with lip seal for holding substrates in a vacuum processing chamber. The apparatus includes an electrostatic clamp, a sealing member surrounding the electrostatic clamp, and an edge ring surrounding the sealing member and holding the sealing member in place against the electrostatic clamp. The sealing member provides a seal between the electrostatic clamp and the substrate. This seal prevents the leakage of temperature control gas into the processing chamber and prevents process gas from reaching the electrostatic clamp and/or causing arcing in the chamber. In addition, by leaving a small gap between the sealing surface of the resilient sealing member and the edge of the electrostatic clamp, a helium distribution channel is created outside the electrostatic clamp top surface thus maximizing available contact area between the substrate and the clamp.

Abstract: An efficient RF coil for inductively coupled plasmas provides either capacitive or inductive coupling to the plasma. The coil has a layered structure including at least one RF coil, an insulator having a low dielectric constant and a second RF magnetic structure. The second RF magnetic structure may be either a second RF coil or a Faraday shield. In a two coil structure, the first RF coil has a first magnetic sense upon energization by an RF source, and the second RF coil has a second magnetic sense opposite the first magnetic sense. An RF source is connected to the high voltage ends of the two RF coil. Uniform capacitive coupling is achieved by the use of a Faraday shield located between the RF coil and the plasma.

Abstract: An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing. An alternate embodiment further suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

Abstract: An electrostatic chuck is disclosed that is resistant to the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck. A guard ring surrounds the chuck and floats close to the self-bias potential induced by the plasma on the wafer. The voltage between the wafer and the closest electrode is thereby capacitively divided by the guard ring.