Abstract: Fiber-reinforced nonwoven composites having a wide variety of uses (e.g., leisure goods, aerospace, electronics, equipment, energy generation, mass transport, automotive parts, marine, construction, defense, sports and/or the like) are provided. The fiber-reinforced nonwoven composite includes a plurality of carbon fibers and a polymer matrix. The plurality of carbon fibers have an average fiber length from about 50 mm to about 125 mm. The fiber-reinforced nonwoven composite comprises a theoretical void volume from about 0% to about 10%.

Abstract: Fiber-reinforced nonwoven composites having a wide variety of uses (e.g., leisure goods, aerospace, electronics, equipment, energy generation, mass transport, automotive parts, marine, construction, defense, sports and/or the like) are provided. The fiber-reinforced nonwoven composite includes a plurality of carbon fibers and a polymer matrix. The plurality of carbon fibers have an average fiber length from about 50 mm to about 125 mm. The fiber-reinforced nonwoven composite comprises a theoretical void volume from about 0% to about 10%.

Abstract: Fiber-reinforced nonwoven composites having a wide variety of uses (e.g., leisure goods, aerospace, electronics, equipment, energy generation, mass transport, automotive parts, marine, construction, defense, sports and/or the like) are provided. The fiber-reinforced nonwoven composite includes a plurality of carbon fibers and a polymer matrix. The plurality of carbon fibers have an average fiber length from about 50 mm to about 125 mm. The fiber-reinforced nonwoven composite comprises a theoretical void volume from about 0% to about 10%.

Abstract: Fiber-reinforced nonwoven composites having a wide variety of uses (e.g., leisure goods, aerospace, electronics, equipment, energy generation, mass transport, automotive parts, marine, construction, defense, sports and/or the like) are provided. The fiber-reinforced nonwoven composite includes a plurality of carbon fibers and a polymer matrix. The plurality of carbon fibers have an average fiber length from about 50 mm to about 125 mm. The fiber-reinforced nonwoven composite comprises a theoretical void volume from about 0% to about 10%.

Abstract: Fiber-reinforced nonwoven composites having a wide variety of uses (e.g., leisure goods, aerospace, electronics, equipment, energy generation, mass transport, automotive parts, marine, construction, defense, sports and/or the like) are provided. The fiber-reinforced nonwoven composite includes a plurality of carbon fibers and a polymer matrix. The plurality of carbon fibers have an average fiber length from about 50 mm to about 125 mm. The fiber-reinforced nonwoven composite comprises a theoretical void volume from about 0% to about 10%.

Abstract: Fiber-reinforced nonwoven composites having a wide variety of uses (e.g., leisure goods, aerospace, electronics, equipment, energy generation, mass transport, automotive parts, marine, construction, defense, sports and/or the like) are provided. The fiber-reinforced nonwoven composite includes a plurality of carbon fibers and a polymer matrix. The plurality of carbon fibers have an average fiber length from about 50 mm to about 125 mm. The fiber-reinforced nonwoven composite comprises a theoretical void volume from about 0% to about 10%.

Abstract: An item stabilizer configured to prevent lateral movement of an item (such as a product-supporting pallet) in a transport container. The item stabilizer includes a first item side engager, a second item side engager, and a connector attached to each of the item side engagers such that an item can be positioned on the connector between the item side engagers. The item stabilizer is configured to prevent movement of the item by engaging opposite sides of the item while the weight of the item and any products thereon or therein rest on the connector, thereby preventing the connector and the item side engagers themselves from moving laterally. Each item side engager respectively extends between one side of the item and one of the side walls of the transport container to limit the lateral movement of the item. Multiple item stabilizers can work together to hold an item in place.

Abstract: An item stabilizer configured to prevent lateral movement of an item (such as a product-supporting pallet) in a transport container. The item stabilizer includes a first item side engager, a second item side engager, and a connector attached to each of the item side engagers such that an item can be positioned on the connector between the item side engagers. The item stabilizer is configured to prevent movement of the item by engaging opposite sides of the item while the weight of the item and any products thereon or therein rest on the connector, thereby preventing the connector and the item side engagers themselves from moving laterally. Each item side engager respectively extends between one side of the item and one of the side walls of the transport container to limit the lateral movement of the item. Multiple item stabilizers can work together to hold an item in place.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.

Abstract: A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1.5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped devices when such devices are processed using high-temperature processing operations that conventionally urge boron diffusion. The low-thermal budget, silicon-rich silicon nitride film may be used to form spacers in CMOS devices, it may be used as part of a dielectric stack to prevent shorting in tightly packed SRAM arrays, and it may be used in BiCMOS processing to form a base nitride layer and/or nitride spacers isolating the base from the emitter. Furthermore the low-thermal budget, silicon-rich silicon nitride film may remain covering the CMOS structure while bipolar devices are being formed, as it suppresses the boron diffusion that results in boron penetration and boron-doped poly depletion.

Abstract: A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in the dielectric material of the metal layer and the capacitor includes a first capacitor electrode formed within the recess in electrical contact with the device component of the metallization layer. An insulator may be formed over the first capacitor electrode, with a second capacitor electrode formed over the insulator. These elements are preferably conformally deposited within the trench, thereby forming a recess, a portion of which extends within the trench. A subsequently fabricated device component may then be placed in electrical contact with the second capacitor electrode.

Abstract: A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1.5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped devices when such devices are processed using high-temperature processing operations that conventionally urge boron diffusion. The low-thermal budget, silicon-rich silicon nitride film may be used to form spacers in CMOS devices, it may be used as part of a dielectric stack to prevent shorting in tightly packed SRAM arrays, and it may be used in BiCMOS processing to form a base nitride layer and/or nitride spacers isolating the base from the emitter. Furthermore the low-thermal budget, silicon-rich silicon nitride film may remain covering the CMOS structure while bipolar devices are being formed, as it suppresses the boron diffusion that results in boron penetration and boron-doped poly depletion.