Patents by Inventor Michael Seibt

Michael Seibt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240115115
    Abstract: An adaptable working-channel apparatus comprising: at an external working channel attached at its proximal end to a first mounting coupling; a handle-mounting sleeve for surrounding an endoscope shaft or handle, and having on its radially outer peripheral side at least one second mounting coupling for releasable mounting engagement with the first mounting coupling. The first mounting coupling comprises two spring-loaded clamping branches that are hinged together like a clothes pin and each form a clamping portion and an actuation portion. The second mounting coupling has a mounting rail extending in the longitudinal direction of the handle-mounting sleeve and has or forms at least one undercut that can be interlockingly clasped by the clamping branches of the first mounting coupling. Also provided is a distal tissue-clip application adapter that is connectable to the adaptable working-channel apparatus; and a surgical equipping system, having the working-channel apparatus and tissue-clip application adapter.
    Type: Application
    Filed: January 20, 2022
    Publication date: April 11, 2024
    Applicant: Ovesco Endoscopy AG
    Inventors: Michael Seibt, Antonio Caputo, Nico Hofmann, Chi-Nghia Ho
  • Patent number: 5254484
    Abstract: A method for thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single-crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400.degree. and 460.degree. C., in the second step the amorphous layer recrystallizes at a temperature between 500.degree. and 600.degree. C., and in the third step the dopants are activated in an RTA process.
    Type: Grant
    Filed: September 24, 1991
    Date of Patent: October 19, 1993
    Assignee: Telefunken electronic GmbH
    Inventors: Heinz-Achim Hefner, Joachim Imschweiler, Michael Seibt