Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: In a particular illustrative embodiment, a storage device includes a controller and a plurality of resistive elementary memory cells accessible via the controller. Each resistive elementary memory cell of the plurality of resistive elementary memory cells includes a plurality of memory layers selected to have hysteretic properties to store multiple data values.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: An apparatus comprising a phase compensator and an optical condenser in communication with the phase compensator. The phase compensator provides for phase shifting a portion of an electromagnetic wave. The optical condenser is shaped to direct the electromagnetic wave to a focal region of the optical condenser.

Abstract: An apparatus comprising a phase compensator and an optical condenser in communication with the phase compensator. The phase compensator provides for phase shifting a portion of an electromagnetic wave. The optical condenser is shaped to direct the electromagnetic wave to a focal region of the optical condenser.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A memory cell includes a magnetoresistive sensor that comprises layers that include a free layer. The magnetoresistive sensor conducts a read current representative of data stored in the memory cell during a read interval. A first write conductor carries a write current that writes data in the free layer. At least one of the layers comprises a multiferroic layer formed of multiferroic material.

Abstract: A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross-sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current pulse generates a thermoelectric heat flow pulse between the thermoelectric device and the memory cell.

Abstract: A heat assisted magnetic recording head with a multilayer electromagnetic (EM) radiation emission structure. The multilayer EM radiation emission structure is in optical communication with a light source for heating a recording medium. Particularly, the multilayer EM radiation emission structure includes a conducting layer for receiving the light source and a protective layer formed adjacent the conducting layer to protect the conducting layer from contact with a recording medium. An aperture extends through the conducting layer in the protective layer to allow the light source to pass therethrough to heat the recording medium.

Abstract: A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current pulse generates a thermoelectric heat flow pulse between the thermoelectric device and the memory cell.

Abstract: In accordance with the present invention, a colloidal immersion lithography medium is provided. The medium comprises: a) a continuous liquid phase comprising a liquid having an index of refraction of at least 1.0, generally 1.4; and b) a plurality of particles having an average particle size between 1 nanometer and 2 microns and having an index of refraction of at least that of the liquid, substantially homogeneously dispersed in the liquid phase. Also provided are methods of preparing a colloidal immersion lithography medium, immersion lithography systems, and immersion lithography processes.

Abstract: A magnetic field sensor includes a metallic bar coupled to a substrate. Current leads are adapted to provide current to the ferromagnetic bar. Voltage leads are coupled to the ferromagnetic bar to sense an induced Hall voltage therein.

Abstract: An apparatus comprises a first current-in-plane sensor, a first magnetic field source for biasing the first current-in-plane sensor in a first direction, a second current-in-plane sensor positioned parallel to the first current-in-plane sensor, a second magnetic field source for biasing the second current-in-plane sensor in a second direction, and first and second electrodes for supplying sense current to the first and second current-in-plane sensors.

Abstract: A magnetic storage media comprises a substrate supporting the layer of magnetic media having a tilted C-axis greater than approximately 25° with respect to surface normal and having a magnetic easy axis tilted at an angle at approximately greater than 30° from the substrate surface normal. The media includes an oblique deposited seedlayer structure directing tilted C-axis growth of the magnetic material layer independent of the angle of deposition of the magnetic material layer. The orientation C-axis and the magnetic easy axis of the media may be organized into circumferential or radial patterns on the substrate surface, and additionally may possess azimuthal symmetry.