Patents by Inventor Michael Sershen

Michael Sershen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190284689
    Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.
    Type: Application
    Filed: June 3, 2019
    Publication date: September 19, 2019
    Inventors: Mark Sowa, Robert Kane, Michael Sershen
  • Patent number: 10351950
    Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: July 16, 2019
    Assignee: Ultratech, Inc.
    Inventors: Mark Sowa, Robert Kane, Michael Sershen
  • Publication number: 20160281223
    Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.
    Type: Application
    Filed: November 21, 2014
    Publication date: September 29, 2016
    Applicant: Ultratech, Inc.
    Inventors: Mark Sowa, Robert Kane, Michael Sershen