Abstract: A gaming system comprises a wager input device and a display for displaying a wallpaper, a plurality of symbols, and a plurality of symbol backgrounds. The symbols overly the symbol backgrounds, and the symbol backgrounds overly the wallpaper. The plurality of symbols represent a randomly selected outcome of a wagering game. The system further comprises a controller operative to increase a translucence of at least one of the symbol backgrounds to increase visibility of the wallpaper in response to a triggering event.

Abstract: A gaming system comprises a wager input device and a display for displaying a wallpaper, a plurality of symbols, and a plurality of symbol backgrounds. The symbols overly the symbol backgrounds, and the symbol backgrounds overly the wallpaper. The plurality of symbols represent a randomly selected outcome of a wagering game. The system further comprises a controller operative to increase a translucence of at least one of the symbol backgrounds to increase visibility of the wallpaper in response to a triggering event.

Abstract: A dosing device for demand-dosing a liquid includes a primary container, a point of release for releasing the liquid, a main liquid channel between the primary container and the point of release and a vented secondary container, wherein the secondary container is coupled to the main liquid channel at a branch point, wherein the secondary container and the main liquid channel are designed such that the main liquid channel preferably fills with the liquid before the secondary container. The dosing device further includes a liquid valve between the primary container and the branch point, a sensor for measuring the filling level in the secondary container and finally means for opening the valve responsive to a predetermined filling level in the secondary container.

Abstract: In semiconductor memories, in particular DRAMs, the memory cells of which have vertical transistors at vertical lands formed from substrate material, gate electrodes are formed as spacers which run around the land. The gate electrodes of adjacent memory cells conventionally have to be retroactively connected to form word lines. It is known to fill spaces between adjacent lands with an oxide, with the result that the spacers are formed directly as word lines but only cover two side walls of a land. Two transistors which are connected in parallel are formed at these side walls instead of a single transistor, since the gate electrode does not run around the land. The invention proposes a method for fabricating a semiconductor memory in which all four side walls of a land are covered by the word lines and at the same time lands of adjacent memory cells are connected to one another by the word lines.

Abstract: The present invention provides a fabrication method for a trench capacitor with an insulation collar in a substrate, which is electrically connected to the substrate on one side via a buried contact. After forming and sinking an electrically conductive filling, an insulation collar and, if appropriate, a buried contact that is connected on all sides, the following are effected: providing at least one liner layer in the trench; filling the trench with a filling made of an auxiliary material, which filling is encapsulated by the at least one liner layer in the trench; providing a mask on the filling for defining the structure of the buried contact, the mask having no projections into the trench; removing a part of the filling using the mask; removing an underlying part of the at least one liner layer for uncovering a corresponding part of the insulation collar.

Abstract: A dosing device for demand-dosing a liquid includes a primary container (10), a point of release (22) for releasing the liquid, a main liquid channel (16) between the primary container (10) and the point of release (22) and a vented secondary container (26), wherein the secondary container (26) is coupled to the main liquid channel 16 at a branch point (20), wherein the secondary container (26) and the main liquid channel (16) are designed such that the main liquid channel (16) preferably fills with the liquid before the secondary container (26). The dosing device further includes a liquid valve (18) between the primary container (10) and the branch point (20), a sensor (30) for measuring the filling level in the secondary container (26) and finally means (32) for opening the valve (18) responsive to a predetermined filling level in the secondary container (26).

Abstract: In semiconductor memories, in particular DRAMs, the memory cells of which have vertical transistors at vertical lands formed from substrate material, gate electrodes are formed as spacers which run around the land. The gate electrodes of adjacent memory cells conventionally have to be retroactively connected to form word lines. It is known to fill spaces between adjacent lands with an oxide, with the result that the spacers are formed directly as word lines but only cover two side walls of a land. Two transistors which are connected in parallel are formed at these side walls instead of a single transistor, since the gate electrode does not run around the land. The invention proposes a method for fabricating a semiconductor memory in which all four side walls of a land are covered by the word lines and at the same time lands of adjacent memory cells are connected to one another by the word lines.