Abstract: A method is disclosed. The method includes providing a first movable assembly that is movable between a first location and a second location of a structure, providing a second movable assembly that is movable between a third location and a fourth location of the structure, and disposing a first growth material in the first movable assembly and a second growth material in the second movable assembly. The method also includes illuminating the first growth material from a first position at the first location at a first time and from a second position at the second location at a second time, and illuminating the second growth material from a third position at the third location at the first time and from a fourth position at the fourth location at the second time.

Abstract: A method of reporting local environmental conditions in real time is implemented by providing a sensor that takes measurements of an environmental condition; attaching the sensor to a vehicle, a person, an object such as a street lamp or other structure; and displaying visible light to the public at a scale visible from at least 30 feet from the visible light. The visible light is controlled by a microcontroller receiving information from the sensor. The visible light is either variable to depict the measurements, such as in color, frequency of illumination, or is variable in a plurality of lamps lighted in accordance with the magnitude of the measurements or in accordance with a composite index. The sensor is preferably modular so that it can be swapped in and out of a printed circuit board.

Abstract: MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a high dielectric constant layer covering the interfacial layer that comprises a material that is selected from the group consisting of Ta2O5, Ta2(O1?xNx)5 wherein x ranges from greater than 0 to 0.6, a solid solution of (Ta2O5)r—(TiO2)1?r wherein r ranges from about 0.9 to less than 1, a solid solution (Ta2O5)s—(Al2O3)1?s wherein s ranges from 0.9 to less than 1, a solid solution of (Ta2O5)t—(ZrO2)1?t wherein t ranges from about 0.9 to less than 1, a solid solution of (Ta2O5)u—(HfO2)1?u wherein u ranges from about 0.9 to less than 1, and mixtures thereof wherein the interfacial layer separates the high dielectric constant layer from the substrate; (b) a gate electrode having a width of less than 0.

Abstract: MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a high dielectric constant layer covering the interfacial layer that comprises a material that is selected from the group consisting of Ta2O5, Ta2(O1−xNx)5 wherein x ranges from greater than 0 to 0.6, a solid solution of (Ta2O5)r—(TiO2)1−r wherein r ranges from about 0.9 to 1, a solid solution (Ta2O5)s—(Al2O3)1−s wherein s ranges from 0.9 to 1, a solid solution of (Ta2O5)t—(ZrO2)1−t wherein t ranges from about 0.9 to 1, a solid solution of (Ta2O5)u—(HfO2)1−u wherein u ranges from about 0.9 to 1, and mixtures thereof wherein the interfacial layer separates the high dielectric constant layer from the substrate; (b) a gate electrode having a width of less than 0.

Abstract: MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a high dielectric constant layer covering the interfacial layer that comprises a material that is selected from the group consisting of Ta2O5, Ta2(O1−xNx)5 wherein x ranges from greater than 0 to 0.6, a solid solution of (Ta2O5)r—(TiO2)1−r wherein r ranges from about 0.9 to 1, a solid solution (Ta2O5)s—(Al2O3)1−s wherein s ranges from 0.9 to 1, a solid solution of (Ta2O5)t—(ZrO2)1−t wherein t ranges from about 0.9 to 1, a solid solution of (Ta2O5)u—(HfO2)1−u wherein u ranges from about 0.9 to 1, and mixtures thereof wherein the interfacial layer separates the high dielectric constant layer from the substrate; (b) a gate electrode having a width of less than 0.

Abstract: MOS transistor formed on a semiconductor substrate of a first conductivity type and method of fabrication are provided. The device includes (a) an interfacial layer formed on the substrate; (b) a high dielectric constant layer covering the interfacial layer that comprises a material that is selected from the group consisting of Ta2O5, Ta2(O1-xNx)5 wherein x ranges from greater than 0 to 0.6, a solid solution of (Ta2O5)r—(TiO2)1-r wherein r ranges from about 0.9 to 1, a solid solution (Ta2O5)s—(Al2O3)1-s wherein s ranges from 0.9 to 1, a solid solution of (Ta2O5)t—(ZrO2)1-t wherein t ranges from about 0.9 to 1, a solid solution of (Ta2O5)u—(HfO2)1-u wherein u ranges from about 0.9 to 1, and mixtures thereof wherein the interfacial layer separates the high dielectric constant layer from the substrate; (b) a gate electrode having a width of less than 0.