Patents by Inventor Michael Shearn

Michael Shearn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating micro and nanostructures in a material
    Patent number: 8557612
    Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: October 15, 2013
    Assignee: California Institute of Technology
    Inventors: Michael David Henry, Michael Shearn, Axel Scherer
  • Methods for designing, fabricating, and predicting shape formations in a material
    Patent number: 8557613
    Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: October 15, 2013
    Assignee: California Institute of Technology
    Inventors: Michael Shearn, Michael David Henry, Axel Scherer
  • METHODS FOR DESIGNING, FABRICATING, AND PREDICTING SHAPE FORMATIONS IN A MATERIAL
    Publication number: 20120264237
    Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.
    Type: Application
    Filed: June 13, 2011
    Publication date: October 18, 2012
    Inventors: Michael SHEARN, Michael David HENRY, Axel SCHERER
  • METHOD FOR FABRICATING MICRO AND NANOSTRUCTURES IN A MATERIAL
    Publication number: 20110020960
    Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
    Type: Application
    Filed: June 25, 2010
    Publication date: January 27, 2011
    Inventors: Michael David HENRY, Michael Shearn, Axel Scherer