Patents by Inventor Michael Shingche Chung

Michael Shingche Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate
    Patent number: 5852576
    Abstract: Two NMOS boost transistors have their sources connected to the high voltage input while their drains and gates are cross-connected. Two coupling capacitors connect two alternate phase clocks to the gates of the two cross-connected boost transistors. An NMOS pass transistor has its gate connected to the drain of one of the NMOS boost transistors, its source connected to the high voltage input, and its drain connected to the output. In an embodiment, two diode-connected regulation transistors connect the gates of the boost transistors to the high voltage input. These connections insure that the gates of the boost transistors and the gate of the pass transistor never reach voltages higher than one threshold voltage above the high voltage input. In another embodiment, two discharge transistors have their drains connected to a decode input, their sources connected to the gates of the boost transistors, and their gates connected to the positive power supply.
    Type: Grant
    Filed: October 6, 1997
    Date of Patent: December 22, 1998
    Assignees: Advanced Micro Devices, Inc., Fujitsu Limited
    Inventors: Binh Quang Le, Pau-Ling Chen, Shane Charles Hollmer, Shoichi Kawamura, Michael Shingche Chung, Vincent C. Leung, Masaru Yano