Patents by Inventor Michael Shou-Ming Tong

Michael Shou-Ming Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9117831
    Abstract: A semiconductor device includes a substrate having a circuit region and a seal ring region. The seal ring region surrounds the circuit region. A seal ring structure is disposed over the seal ring region. The seal ring structure has a first portion and a second portion above the first portion. The first portion has a width W1, and the second portion has a width W2. The width W1 is less than the width W2.
    Type: Grant
    Filed: January 11, 2011
    Date of Patent: August 25, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Jung Yang, Yu-Wen Liu, Michael Shou-Ming Tong, Hsien-Wei Chen, Chung-Ying Yang, Tsung-Yuan Yu
  • Patent number: 8963328
    Abstract: A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: February 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Jung Yang, Chang-Pin Huang, Tzuan-Horng Liu, Michael Shou-Ming Tong, Ying-Ju Chen, Tung-Liang Shao, Hsien-Wei Chen, Hao-Yi Tsai, Mirng-Ji Lii
  • Publication number: 20140087522
    Abstract: A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM.
    Type: Application
    Filed: December 2, 2013
    Publication date: March 27, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Jung Yang, Chang-Pin Huang, Tzuan-Horng Liu, Michael Shou-Ming Tong, Ying-Ju Chen, Tung-Liang Shao, Hsien-Wei Chen, Hao-Yi Tsai, Mirng-Ji Lii
  • Patent number: 8610267
    Abstract: A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM.
    Type: Grant
    Filed: July 21, 2010
    Date of Patent: December 17, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Jung Yang, Chang-Pin Huang, Tzuan-Horng Liu, Michael Shou-Ming Tong, Ying-Ju Chen, Tung-Liang Shao, Hsien-Wei Chen, Hao-Yi Tsai, Mirng-Ji Lii
  • Publication number: 20120175728
    Abstract: A semiconductor device includes a substrate having a circuit region and a seal ring region. The seal ring region surrounds the circuit region. A seal ring structure is disposed over the seal ring region. The seal ring structure has a first portion and a second portion above the first portion. The first portion has a width W1, and the second portion has a width W2. The width W1 is less than the width W2.
    Type: Application
    Filed: January 11, 2011
    Publication date: July 12, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Jung YANG, Yu-Wen LIU, Michael Shou-Ming TONG, Hsien-Wei CHEN, Chung-Ying YANG, Tsung-Yuan YU
  • Publication number: 20120018875
    Abstract: A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM.
    Type: Application
    Filed: July 21, 2010
    Publication date: January 26, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Jung Yang, Chang-Pin Huang, Tzuan-Horng Liu, Michael Shou-Ming Tong, Ying-Ju Chen, Tung-Liang Shao, Hsien-Wei Chen, Hao-Yi Tsai, Mirng-Ji Lii