Abstract: An ecosystem that allows fine-grained multi-party control over access to information stored in one or more data sources of a data provider. A requesting party can submit a query job to the data provider. Resellers in the chain can introduce their own query modifiers to the query job, adding additional data access, data transformation and segmentation functions to the query job. The data provider can append its own query modifier to the query job and execute the query job with all of the query modifiers. Access control for each link in the chain is checked before the query modifier for the link is executed. After execution of all query modifiers and the query job, the results can be provided to the requesting party.

Abstract: A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 ?.

Abstract: A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 ?.

Abstract: Embodiments of the present invention address deficiencies of the art in respect to privacy compliance assessment for computer software and provide a method, system and computer program product for a privacy model framework for software applications. In one embodiment, a privacy modeling data processing system can be provided. The privacy modeling data processing system can include a modeling framework configured for communicative coupling to a software application. The modeling framework can capture information flows from requests to and responses from a coupled software application, and can rules-based process the captured information flows for privacy rules to generate a privacy compliance report for the software application.

Abstract: A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 ?.

Abstract: The display rack of the present invention includes a main frame, at least two shelf receiving portions, a plurality of shelves and at least one basket, peg hook basket or reel assembly. The main frame has a back portion and side portions. Each shelf receiving portion is attached to the main frame and has a plurality of generally vertically spaced apart shelf receiving apertures formed therein. Each shelf has spaced apart shelf fingers adapted to be received in the shelf receiving apertures. The plurality of shelves is chosen from the group consisting of shelf basket racks and shelf reel racks. In another aspect of the invention there is provided a web basket for use in association with hanging products. The web basket includes a hook portion, a basket portion and a means for attaching the basket to a shelf. The basket portion is spaced below the hook portion.

Abstract: A method of constructing a Boolean expression in a clinical setting, including identifying at least a first and a second data assertion to add to the Boolean expression, adding at least one Boolean logical operator to the Boolean expression, determining an order of evaluation for the first and second data assertions, and visually depicting the first and second data assertions and the Boolean logical operator in a hierarchal display.

Abstract: For identification purposes, a network is added to a multiply configurable microminiature array. During fabrication of the array, the connection pattern of the network is established to be uniquely representative of the particular circuit then being formed in the array. In response to interrogation signals applied to the array, the network provides a unique pattern of voltages representative of the particular circuit. During actual operation of the array, the identification network is in effect automatically disconnected therefrom.