Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

Abstract: A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.

Abstract: A semiconductor device includes a plurality of trenches extending into a semiconductor substrate. Each trench comprises a plurality of enlarged width regions distributed along the trench. At least one electrically conductive trench structure is located in each trench. The semiconductor device comprises an electrically insulating layer arranged between the semiconductor substrate and an electrode structure. The semiconductor device comprises a vertical electrically conductive structure extending through the electrically insulating layer. The vertical electrically conductive structure forms an electrically connection between the electrode structure and an electrically conductive trench structure located in a first trench of at a first enlarged width region.

Abstract: A battery electrode in accordance with various embodiments may include: a substrate including a surface configured to face an ion-carrying electrolyte; and a first diffusivity changing region at a first portion of the surface, wherein the first diffusivity changing region is configured to change diffusion of ions carried by the electrolyte into the substrate, and wherein a second portion of the surface is free from the first diffusivity changing region.

Abstract: A method of manufacturing a lithium ion battery includes: attaching a lid to a first main surface of a first substrate, the lid including a conductive coves element; forming a cavity between the lid and the first substrate; forming an anode comprising a component made of a semiconductor material at the first substrate; forming a cathode at the lid; and filling an electrolyte into the cavity.

Abstract: A semiconductor device includes a plurality of trenches extending into a semiconductor substrate. Each trench comprises a plurality of enlarged width regions distributed along the trench. At least one electrically conductive trench structure is located in each trench. The semiconductor device comprises an electrically insulating layer arranged between the semiconductor substrate and an electrode structure. The semiconductor device comprises a vertical electrically conductive structure extending through the electrically insulating layer. The vertical electrically conductive structure forms an electrically connection between the electrode structure and an electrically conductive trench structure located in a first trench of at a first enlarged width region.

Abstract: A method of manufacturing a lithium ion battery includes: attaching a lid to a first main surface of a first substrate, the lid including a conductive coves element; forming a cavity between the lid and the first substrate; forming an anode comprising a component made of a semiconductor material at the first substrate; forming a cathode at the lid; and filling an electrolyte into the cavity.

Abstract: Embodiments provide a battery cell including a porous membrane, the porous membrane including transformed semiconductor material. The porous membrane separates a first half-cell from a second half-cell of the battery cell. The porous membrane comprises channels allowing ions and/or an electrolyte to move between the first half-cell and the second half-cell.

Abstract: A lithium ion battery includes a first substrate having a first main surface, and a lid including a conductive cover element, the lid being attached to the first main surface. A cavity is formed between the first substrate and the lid. The battery further includes an electrolyte disposed in the cavity. An anode of the battery includes a component made of a semiconductor material and is formed at the first substrate, and a cathode of the battery is formed at the lid.

Abstract: A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.

Abstract: A method of manufacturing a battery includes introducing a suspension comprising a solvent and fibers into a cavity for housing an electrolyte, drying the solvent, filling the electrolyte into the cavity, and closing the cavity.

Abstract: A lithium battery includes a cathode, an anode integrally formed within a silicon substrate, wherein a surface portion of the silicon substrate is patterned to form a plurality of sub-structures, and an electrolyte.

Abstract: A lithium battery includes a cathode, an anode integrally formed within a silicon substrate, wherein a surface portion of the silicon substrate is patterned to form a plurality of sub-structures, and an electrolyte.

Abstract: In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, a stamp device may be disposed at least in the trench; at least one part of the trench that is free from the stamp device may be at least partially filled with trench filling material; and the stamp device may be removed from the trench.

Abstract: A lithium battery includes a cathode, an anode including a component made of silicon, a separator element disposed between the cathode and the anode, an electrolyte, and a substrate. The anode is disposed over the substrate or the anode is integrally formed with the substrate.

Abstract: A lithium ion battery includes a first substrate having a first main surface, and a lid including a conductive cover element, the lid being attached to the first main surface. A cavity is formed between the first substrate and the lid. The battery further includes an electrolyte disposed in the cavity. An anode of the battery includes a component made of a semiconductor material and is formed at the first substrate, and a cathode of the battery is formed at the lid.

Abstract: In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, imprint material may be deposited at least into the trench, the imprint material in the trench may be embossed using a stamp device, and the stamp device may be removed from the trench.

Abstract: A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.

Abstract: A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.