Patents by Inventor Michael Stolfi
Michael Stolfi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11948885Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.Type: GrantFiled: June 24, 2021Date of Patent: April 2, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Suketu A. Parikh, Rong Tao, Roey Shaviv, Joung Joo Lee, Seshadri Ganguli, Shirish Pethe, David Gage, Jianshe Tang, Michael A Stolfi
-
Publication number: 20230039074Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.Type: ApplicationFiled: October 18, 2022Publication date: February 9, 2023Applicant: Applied Materials, Inc.Inventors: Michael Stolfi, Myungsun Kim, Benjamin Colombeau, Sanjay Natarajan
-
Patent number: 11508828Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.Type: GrantFiled: June 22, 2021Date of Patent: November 22, 2022Assignee: Applied Materials, Inc.Inventors: Michael Stolfi, Myungsun Kim, Benjamin Colombeau, Sanjay Natarajan
-
Publication number: 20220123123Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.Type: ApplicationFiled: October 11, 2021Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: Myungsun Kim, Andy Lo, Eric Davey, Michael Stolfi, Benjamin Colombeau
-
Publication number: 20220037147Abstract: Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (<600° C.), optional film curing, and etch back to form a low-k dielectric film having a dielectric constant, k-value less than 3.Type: ApplicationFiled: July 28, 2021Publication date: February 3, 2022Applicant: Applied Materials, Inc.Inventors: Myungsun Kim, Jingmei Liang, Martin J. Seamons, Michael Stolfi, Benjamin Colombeau
-
Publication number: 20220037529Abstract: Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.Type: ApplicationFiled: July 28, 2021Publication date: February 3, 2022Applicant: Applied Materials, Inc.Inventors: Myungsun Kim, Michael Stolfi, Benjamin Colombeau, Andy Lo
-
Publication number: 20220005937Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.Type: ApplicationFiled: June 22, 2021Publication date: January 6, 2022Applicant: Applied Materials, Inc.Inventors: Michael Stolfi, Myungsun Kim, Benjamin Colombeau, Sanjay Natarajan
-
Publication number: 20210320064Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.Type: ApplicationFiled: June 24, 2021Publication date: October 14, 2021Inventors: SUKETU A. PARIKH, RONG TAO, ROEY SHAVIV, JOUNG JOO LEE, SESHADRI GANGULI, SHIRISH PETHE, DAVID GAGE, JIANSHE TANG, MICHAEL A STOLFI
-
Patent number: 11075165Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.Type: GrantFiled: July 19, 2019Date of Patent: July 27, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Suketu A Parikh, Rong Tao, Roey Shaviv, Joung Joo Lee, Seshadri Ganguli, Shirish Pethe, David Gage, Jianshe Tang, Michael A Stolfi
-
Publication number: 20210020569Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.Type: ApplicationFiled: July 19, 2019Publication date: January 21, 2021Inventors: SUKETU A. PARIKH, RONG TAO, ROEY SHAVIV, JOUNG JOO LEE, SESHADRI GANGULI, SHIRISH PETHE, DAVID GAGE, JIANSHE TANG, MICHAEL A. STOLFI
-
Publication number: 20190212656Abstract: Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.Type: ApplicationFiled: January 10, 2019Publication date: July 11, 2019Inventors: Huixiong Dai, Weimin Zeng, Daniel Lee Diehl, Yong Cao, Hsiang Ning Wu, Khoi Phan, Christopher S. Ngai, Mingwei Zhu, Michael Stolfi, Nelson M. Felix, Ekmini Anuja DeSilva, Xianmin Tang