Abstract: A mask structure and method of quantitatively measuring pellicle degradation in production photomasks by measuring overlay in test structures on the mask. A structure is located in a high transmission region close to a transition region between a low transmission and a high transmission region of the mask such that pellicle degradation impacts the printing of the object. A second structure is located in low transmission region such that the printing of the second structure overlaps the first and provides a measure of pellicle degradation.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

Abstract: A mask structure and method of quantitatively measuring pellicle degradation in production photomasks by measuring overlay in test structures on the mask. A structure is located in a high transmission region close to a transition region between a low transmission and a high transmission region of the mask such that pellicle degradation impacts the printing of the object. A second structure is located in low transmission region such that the printing of the second structure overlaps the first and provides a measure of pellicle degradation.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: A mask structure and method of quantitatively measuring pellicle degradation in production photomasks by measuring overlay in test structures on the mask. A structure is located in a high transmission region close to a transition region between a low transmission and a high transmission region of the mask such that pellicle degradation impacts the printing of the object. A second structure is located in low transmission region such that the printing of the second structure overlaps the first and provides a measure of pellicle degradation.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

Abstract: A method of measuring the phase shift between two regions of a phase shift mask. A workpiece is provided including a first pair of slits each having a substantially similar phase shift characteristic and a second pair of slits each having a different phase shift characteristic. Electromagnetic radiation is directed through the first pair of slits and the second pair of slits on the workpiece. A relative shift is measured between interference patterns caused by the first pair of slits and the second pair of slits.

Abstract: A method for manufacturing a photolithography mask. At least two interfering beams of radiation are utilized to define a grid of dividing lines corresponding to an interference pattern produced by the interfering beams on a surface of a photolithography mask coated with a mask film.

Abstract: The invention relates to the evaluation of the pupil illumination profile in a projection lithography system using an imaging reticle featuring a plurality of holes of few microns in diameter. The imaging reticle is placed at the lens object plane and a photoresist coated substrate is exposed in a defocused position from the lithographic image plane. The image reticle has a plurality of identical holes that are regularly spaced at predetermined distances for a more detailed evaluation of the effective pupil illumination across the entire exposure field.

Abstract: A method of making a rim-type phase shift mask comprising the steps of: providing a substrate having opposing first and second surfaces, the first surface being at least partially covered with a first layer of material that substantially blocks the transmission therethrough of electromagnetic radiation of the predetermined range of wavelengths; forming a plurality of openings extending through the first layer so as to expose underlying portions of the first surface of the substrate; depositing a layer of hybrid photoresist on the first layer; exposing the second surface of the substrate to electromagnetic radiation to activate the desired portions of the hybrid photoresist; developing the photoresist, thereby exposing portions underlying the resist; and etching the exposed portions of the substrate is disclosed.