Patents by Inventor Michael Stroscio

Michael Stroscio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Intersubband semiconductor lasers with enhanced subband depopulation rate
    Patent number: 7310361
    Abstract: Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 ?m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: December 18, 2007
    Assignee: United States of America as Represented by the Secretary of the Army
    Inventors: Gregory Belenky, Mitra Dutta, Mikhail Kisin, Serge Luryi, Michael Stroscio
  • Intersubband semiconductor lasers with enhanced subband depopulation rate
    Publication number: 20050041711
    Abstract: Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 ?m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
    Type: Application
    Filed: September 29, 2004
    Publication date: February 24, 2005
    Inventors: Gregory Belenky, Mitra Dutta, Mikhail Kisin, Serge Luryi, Michael Stroscio
  • Intersubband semiconductor lasers with enhanced subband depopulation rate
    Patent number: 6819696
    Abstract: Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 &mgr;m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: November 16, 2004
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Gregory Belenky, Mitra Dutta, Mikhail Kisin, Serge Luryi, Michael Stroscio