Patents by Inventor Michael Stumborg

Michael Stumborg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming epitaxial BaF.sub.2 on GaAs
    Patent number: 5690737
    Abstract: A process for growing single crystal epitaxial BaF.sub.2 layers on gallium rsenide substrates by slowly reacting Ba, BaCl.sub.2, Bal.sub.2, BaBr.sub.2, BaF.sub.2 .cndot.BaCl.sub.2, BaF.sub.2 .cndot.BaBr.sub.2, BaF.sub.2 .cndot.BaI.sub.2, BaCl.sub.2 .cndot.BaBr.sub.2, Ba.sub.3 (GaF.sub.6).sub.2, BAH.sub.2, or BaO.sub.2 vapor with a clean, hot GaAs substrate at 500.degree. C. to 700.degree. C. in high vacuum until a uniform, thin (.about.12 .ANG.) layer of reaction product is formed and then vapor depositing BaF.sub.2 onto the reaction layer at room temperature to 400.degree. C. to form the single crystal, epitaxial BaF.sub.2 layer.
    Type: Grant
    Filed: May 31, 1995
    Date of Patent: November 25, 1997
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Francisco Santiago, Tak-Kin Chu, Michael Stumborg