Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

Abstract: This disclosure describes an optical reflectance method for rapid and simultaneous determination of surface roughness and structure of silicon films deposited by chemical vapor deposition. The magnitude of the reflectance of polycrystalline silicon films at a wavelength of about 280 nm can be used directly as a quantitative measure of film surface roughness. The magnitude of the reflectance of as-deposited amorphous or mixed amorphous-polycrystalline silicon films at a wavelength of about 400 nm can be used as a measure of the combined surface roughness and amorphism of the films. Other materials such as metals, alloys and silicides used in semiconductor technology may be evaluated with respect to surface roughness in a similar manner.

Abstract: An improved liner for crucibles and dies used to melt silicon comprising one or more sheets of graphite each of which has on at least the surface facing the silicon melt a layer of silicon nitride or silicon oxynitride.

Abstract: The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the magnitude of the difference is a measure of the quality of the semiconductor material.

Abstract: The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the mangitude of the difference is a measure of the quality of the semiconductor material.