Patents by Inventor Michael T. Phenis
Michael T. Phenis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11353794Abstract: Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about 0° C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulations can additionally contain a secondary solvent. The formulations do not contain tetramethylammonium hydroxide. Methods for use of the stripping solutions are additionally provided.Type: GrantFiled: December 17, 2018Date of Patent: June 7, 2022Assignee: VERSUM MATERIALS US, LLCInventors: Richard Dalton Peters, Michael T. Phenis
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Publication number: 20190196337Abstract: Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about 0° C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulations can additionally contain a secondary solvent. The formulations do not contain tetramethylammonium hydroxide. Methods for use of the stripping solutions are additionally provided.Type: ApplicationFiled: December 17, 2018Publication date: June 27, 2019Applicant: Versum Materials US, LLCInventors: Richard Dalton Peters, Michael T. Phenis
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Patent number: 9243218Abstract: Methods for using improved stripper solutions having dimethyl sulfoxide; a quaternary ammonium hydroxide; an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, with the amino and hydroxyl substituents being attached to two different carbon atoms; and a surfactant. Some formulation can additionally contain a secondary solvent. The stripper solutions are effective for removing photoresists from substrates, and typically have freezing points below about +15° C. and high loading capacities.Type: GrantFiled: December 15, 2009Date of Patent: January 26, 2016Assignee: Dynaloy, LLCInventors: Michael T. Phenis, Lauri Kirby Kirkpatrick, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
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Patent number: 8987181Abstract: A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.Type: GrantFiled: October 15, 2012Date of Patent: March 24, 2015Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Donald Pfettscher, Meagan Hatfield, Spencer Erich Hochstetler, Nichelle M. Wheeler, Michael T. Phenis
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Patent number: 8440389Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: GrantFiled: June 24, 2009Date of Patent: May 14, 2013Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, John M. Atkinson, Raymond Chan, Michael T. Phenis, Allison C. Rector, Donald Pfettscher
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Patent number: 8263539Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.Type: GrantFiled: October 23, 2006Date of Patent: September 11, 2012Assignee: Dynaloy, LLCInventors: Michael T. Phenis, Diane Marie Scheele, Kimberly Dona Pollard
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Patent number: 7851427Abstract: Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: GrantFiled: February 1, 2010Date of Patent: December 14, 2010Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Michael T. Phenis
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Publication number: 20100221503Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: ApplicationFiled: June 24, 2009Publication date: September 2, 2010Applicant: DYNALOY LLCInventors: Kimberly Dona Pollard, John M. Atkinson, Raymond Chan, Michael T. Phenis, Allison C. Rector, Donald Pfettscher
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Publication number: 20100137181Abstract: Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: ApplicationFiled: February 1, 2010Publication date: June 3, 2010Inventors: Kimberly Dona Pollard, Michael T. Phenis
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Publication number: 20100104824Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. Advantageous solution methods are provided for the use of the novel stripper solutions to prepare an electronic interconnect structure by removing a plurality of resist layers to expose an underlying dielectric and related substrate without imparting damage to any of the underlying structure.Type: ApplicationFiled: April 6, 2007Publication date: April 29, 2010Inventors: Michael T. Phenis, Raymond Chan, Kimberly Dona Pollard
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Publication number: 20100089426Abstract: Methods for using improved stripper solutions having dimethyl sulfoxide; a quaternary ammonium hydroxide; an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, with the amino and hydroxyl substituents being attached to two different carbon atoms; and a surfactant. Some formulation can additionally contain a secondary solvent. The stripper solutions are effective for removing photoresists from substrates, and typically have freezing points below about +15° C. and high loading capacities.Type: ApplicationFiled: December 15, 2009Publication date: April 15, 2010Inventors: Michael T. Phenis, Lauri Kirby Kirkpatrick, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
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Patent number: 7655608Abstract: Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: GrantFiled: October 30, 2007Date of Patent: February 2, 2010Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Michael T. Phenis
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Patent number: 7632796Abstract: Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about +15° C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulation can additionally contain a secondary solvent. Methods for use of the stripping solutions are additionally provided.Type: GrantFiled: October 28, 2005Date of Patent: December 15, 2009Assignee: Dynaloy, LLCInventors: Michael T. Phenis, Lauri Kirby Kirkpatrick, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard, Gene Goebel
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Publication number: 20090186793Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.Type: ApplicationFiled: October 24, 2006Publication date: July 23, 2009Inventors: Michael T. Phenis, Lauri Renee Johnson, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard, Gene Goebel
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Publication number: 20090036344Abstract: Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: ApplicationFiled: October 30, 2007Publication date: February 5, 2009Inventors: Kimberly Dona Pollard, Michael T. Phenis
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Publication number: 20040077773Abstract: Novel liquid curable gelling material are disclosed and based on the reaction between a polyol-capped isocyanate and an adduct of an anhydride and a polyol. The liquid gelling material forms a gel characterized by both urethane and ester linkages. In a specific embodiment, the two part curable liquid potting composition comprises in part A, a hydroxyl capped polyisocyanate, and less than 1000 ppm of free isocyanate, and in part B, an anhydride adduct of polybutadiene comprising a polybutadiene segment. The preferred polybutadiene segment has a molecular weight of from 500 and 20,000. In a second embodiment, the 2-part curable liquid potting composition comprises in part A: a polybutaidene polyol capped polyisocyanate containing less than 1000 ppm of free isocyanate, and in part B an anhydride adduct of a polyol having a molecular weight of from 500 and 20,000.Type: ApplicationFiled: July 11, 2003Publication date: April 22, 2004Inventors: Manuel J. Tavares, Michael T. Phenis, Paul W. Hough
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Patent number: 6322848Abstract: A flexible encapsulating material resulting from a mixture that includes at least one epoxy novolak resin and at least two other epoxy compounds wherein the material has a percent hardness change of less than 20% after thermal aging of 504 hours at 140° C. The epoxy novolak resin preferably has less than 3 epoxy groups per molecule. A further embodiment is an electronic component encapsulated with a flexible material resulting from combining a two part system wherein a first part includes an epoxy novolak resin and at least two other epoxy resins and the second part includes at least one amine. An additional embodiment is a method for flexibly encapsulating an electronic component comprising applying to the component a mixture comprising an epoxy novolak resin having less than 3 epoxy groups per molecule and at least one other epoxy compound.Type: GrantFiled: October 26, 1999Date of Patent: November 27, 2001Assignee: Lord CorporationInventors: Michael T. Phenis, Manny Tavares