Abstract: The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.

Abstract: The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.

Abstract: A method of making and using a reference wafer and a metrology system to calibrate tools in a photolithographic system. The reference wafer includes a silicon substrate, a dielectric or insulating layer disposed above the silicon substrate and a pattern disposed above the insulating layer. The pattern is coupled to the silicon substrate and the silicon substrate acts as a ground for the pattern. As a result, charge buildup on the pattern is mitigated since excess charge is dissipated into the silicon substrate.

Abstract: The present invention provides for an improved method of making and using a reference wafer and a metrology system to calibrate tools in a photolithographic system. The reference wafer includes a silicon substrate, a dielectric or insulating layer disposed above the silicon substrate and a pattern disposed above the insulating layer. The pattern is coupled to the silicon substrate and the silicon substrate acts as a ground for the pattern. As a result, charge buildup on the pattern is mitigated since excess charge is dissipated into the silicon substrate.

Abstract: In one embodiment, the present invention relates to a method of making a carbonized antireflection coating involving the steps of depositing a polymer layer on a semiconductor substrate; and carbonizing at least a portion of the polymer layer in an inert atmosphere to provide the carbonized antireflection coating. In another embodiment, the present invention relates to a method of improving critical dimensional control during lithography, involving the steps of providing a semiconductor substrate; depositing a polymer layer on the semiconductor substrate; carbonizing at least a portion of the polymer layer in an inert atmosphere to provide a carbonized antireflection coating; depositing a photoresist over the carbonized antireflection coating; and patterning the photoresist.