Abstract: A method for creating a secure data block to validate an information source is disclosed. For example, the method is executed by a processor and includes receiving a story via a user interface, accessing a truth criteria database to identify a truth criteria associated with a category of the story, associating one or more parameters of the story to the truth criteria to create a map between the one or more parameters and the truth criteria, and creating one or more secure data blocks to record the map between the one or more parameters of the story and the truth criteria.

Abstract: A method for creating a secure data block to validate an information source is disclosed. For example, the method is executed by a processor and includes receiving a story via a user interface, accessing a truth criteria database to identify a truth criteria associated with a category of the story, associating one or more parameters of the story to the truth criteria to create a map between the one or more parameters and the truth criteria, and creating one or more secure data blocks to record the map between the one or more parameters of the story and the truth criteria.

Abstract: A door operating system or door opening and closing apparatus comprising at least one motive source, a linkage assembly and a door. Preferred door operating systems will include two linkage assemblies, two doors and two motive sources, one for each door. Each motive source is preferably attached to an interior facing surface of a frame of a structure and the door is pivotally attached to an exterior facing surface of the frame of a structure. Each linkage assembly operatively connects the respective motive source to the respective door. By having the motive source attached to the interior facing surface of the frame, doors of the operating system can preferably be opened the full width of the frame opening to maximize available vehicle clearance.

Abstract: A door operating system or door opening and closing apparatus comprising at least one motive source, a linkage assembly and a door. Preferred door operating systems will include two linkage assemblies, two doors and two motive sources, one for each door. Each motive source is preferably attached to an interior facing surface of a frame of a structure and the door is pivotally attached to an exterior facing surface of the frame of a structure. Each linkage assembly operatively connects the respective motive source to the respective door. By having the motive source attached to the interior facing surface of the frame, doors of the operating system can preferably be opened the full width of the frame opening to maximize available vehicle clearance.

Abstract: An apparatus for electrical inspection is disclosed. The apparatus comprises an inert gas delivery system that delivers inert gas near a microscope imaging element and electrical test probes. A gas supply provides an inert gas such as argon or nitrogen. The inert gas displaces oxygen to prevent premature oxidation of the test probes. In one embodiment, one or more delivery tubes deliver inert gas to the measurement area.

Abstract: An apparatus for electrical inspection is disclosed. The apparatus comprises an inert gas delivery system that delivers inert gas near a microscope imaging element and electrical test probes. A gas supply provides an inert gas such as argon or nitrogen. The inert gas displaces oxygen to prevent premature oxidation of the test probes. In one embodiment, one or more delivery tubes deliver inert gas to the measurement area.

Abstract: A link portion between a first electrode and a second electrode includes a semiconductor link portion and a metal semiconductor alloy link portion comprising a first metal semiconductor alloy. An electrical pulse converts the entirety of the link portion into a second metal semiconductor alloy having a lower concentration of metal than the first metal semiconductor alloy. Due to the stoichiometric differences between the first and second metal semiconductor alloys, the link portion has a higher resistance after programming than prior to programming. The shift in electrical resistance well controlled, which is advantageously employed to as a programmable precision resistor.

Abstract: A link portion between a first electrode and a second electrode includes a semiconductor link portion and a metal semiconductor alloy link portion comprising a first metal semiconductor alloy. An electrical pulse converts the entirety of the link portion into a second metal semiconductor alloy having a lower concentration of metal than the first metal semiconductor alloy. Due to the stoichiometric differences between the first and second metal semiconductor alloys, the link portion has a higher resistance after programming than prior to programming. The shift in electrical resistance well controlled, which is advantageously employed to as a programmable precision resistor.

Abstract: Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.

Abstract: Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.

Abstract: A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.

Abstract: A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.