Abstract: An example method can comprise receiving content for presentation at a user device. The content can comprise a plurality of sections, and each section can comprise a video portion and an audio portion. The user device can also receive content metadata regarding one or more features of the content, where the features of the content comprise one or more candidate sections of the content for modification. The user device can apply one or more rules to the received content based on the content metadata to modify one or more of the audio portion and the video portion of at least one section of the content, creating modified content, and can cause presentation of the modified content on a display device.

Abstract: An example method can comprise receiving content for presentation at a user device. The content can comprise a plurality of sections, and each section can comprise a video portion and an audio portion. The user device can also receive content metadata regarding one or more features of the content, where the features of the content comprise one or more candidate sections of the content for modification. The user device can apply one or more rules to the received content based on the content metadata to modify one or more of the audio portion and the video portion of at least one section of the content, creating modified content, and can cause presentation of the modified content on a display device.

Abstract: An example method can comprise receiving content for presentation at a user device. The content can comprise a plurality of sections, and each section can comprise a video portion and an audio portion. The user device can also receive content metadata regarding one or more features of the content, where the features of the content comprise one or more candidate sections of the content for modification. The user device can apply one or more rules to the received content based on the content metadata to modify one or more of the audio portion and the video portion of at least one section of the content, creating modified content, and can cause presentation of the modified content on a display device.

Abstract: A diesel-emissions reduction unit having an inlet adapted to receive an exhaust stream of the diesel engine; a diesel oxidation trap catalyst located adjacent the inlet; a dosing controller and an injection lance arranged to meter aqueous NH3 into the exhaust stream; a NOx concentration sensor and a NH3 concentration sensor with at least one oxidation catalyst panel arranged to isolate the NOx concentration sensor from NH3 in the exhaust stream; and an exhaust heater arranged to heat the exhaust stream of the diesel engine toward the inlet of the diesel emissions reduction unit.

Abstract: An example method can comprise receiving content for presentation at a user device. The content can comprise a plurality of sections, and each section can comprise a video portion and an audio portion. The user device can also receive content metadata regarding one or more features of the content, where the features of the content comprise one or more candidate sections of the content for modification. The user device can apply one or more rules to the received content based on the content metadata to modify one or more of the audio portion and the video portion of at least one section of the content, creating modified content, and can cause presentation of the modified content on a display device.

Abstract: A diesel-emissions reduction unit having an inlet adapted to receive an exhaust stream of the diesel engine; a diesel oxidation trap catalyst located adjacent the inlet; a dosing controller and an injection lance arranged to meter aqueous NH3 into the exhaust stream; a NOx concentration sensor and a NH3 concentration sensor with at least one oxidation catalyst panel arranged to isolate the NOx concentration sensor from NH3 in the exhaust stream; and an exhaust heater arranged to heat the exhaust stream of the diesel engine toward the inlet of the diesel emissions reduction unit.

Abstract: An example method can comprise receiving content for presentation at a user device. The content can comprise a plurality of sections, and each section can comprise a video portion and an audio portion. The user device can also receive content metadata regarding one or more features of the content, where the features of the content comprise one or more candidate sections of the content for modification. The user device can apply one or more rules to the received content based on the content metadata to modify one or more of the audio portion and the video portion of at least one section of the content, creating modified content, and can cause presentation of the modified content on a display device.

Abstract: A diesel-electric locomotive includes a diesel emissions reduction unit, including an inlet configured to receive an exhaust stream of a high-speed diesel engine; means for trapping at least a portion of diesel particulate matter contained in the exhaust stream; an aqueous NH3 dosing system including a dosing controller in communication with an electronic locomotive controller and a nitrogen oxide (“NOx”) concentration sensor and an ammonia (“NH3”) concentration sensor, at least one oxidation catalyst panel arranged to isolate the NOx concentration sensor from NH3 in the exhaust stream; mixing elements located between the dosing system and the NOx and NH3 concentration sensors to mix metered aqueous NH3 in the exhaust stream; a selective catalyst reactor bed located between the mixing elements and the NOx and NH3 concentration sensors; and an exhaust heating system in communication with at least one of the dosing and electronic locomotive controllers.

Abstract: A diesel-electric locomotive includes a diesel emissions reduction unit, including an inlet configured to receive an exhaust stream of a high-speed diesel engine; means for trapping at least a portion of diesel particulate matter contained in the exhaust stream; an aqueous NH3 dosing system including a dosing controller in communication with an electronic locomotive controller and a nitrogen oxide (“NOx”) concentration sensor and an ammonia (“NH3”) concentration sensor, at least one oxidation catalyst panel arranged to isolate the NOx concentration sensor from NH3 in the exhaust stream; mixing elements located between the dosing system and the NOx and NH3 concentration sensors to mix metered aqueous NH3 in the exhaust stream; a selective catalyst reactor bed located between the mixing elements and the NOx and NH3 concentration sensors; and an exhaust heating system in communication with at least one of the dosing and electronic locomotive controllers.

Abstract: A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.

Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure. In one example, providing the Schottky contact region comprises forming a layer of material comprising as-formed nickel-chrome; exposing the layer of material to a temperature in a range from about 400 degrees Celsius through about 550 degrees Celsius; and after the step of exposing, removing any unreacted portions of the layer of material.

Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure.

Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure.

Abstract: A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.

Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. A second active trench is configured to be at a depth similar to the termination trench. The selected trench depth difference in combination with one or more of the other second active trench depth, the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, first active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.

Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed between two trenches, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the doped region with the multi-concentration impurity profile.

Abstract: A method of forming a semiconductor includes a providing a termination trench and an active trench within a semiconductor layer. The active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.

Abstract: An electronic device can include one or more trenches that include a material that defines one or more voids. In an embodiment, the substrate defines a first trench having a first portion and a second portion laterally adjacent to the first portion, wherein the first portion has with a first width, the second portion has a second width, and the first width is wider than the second width. The material defines a first void at a predetermined location within the first portion of the first trench and has a seam within the second portion of the first trench. In another embodiment, the substrate defining a trench, and the material that defines spaced-apart voids at predetermined locations within the trench. A process of forming the electronic device can include patterning a substrate to define a trench, and depositing a material within the trench, wherein the deposited material defines a void.