Abstract: In some examples, a photodiode semiconductor stack may include an absorption layer and a photon trap layer. The photon trap layer is positioned with respect to the absorption layer to absorb at least some photons that are not absorbed in the absorption layer, which may reduce a number of times that multiple photons make round trips in the photodiode semiconductor stack without generating more photocurrent. The recovery time of the photodiode semiconductor stack may be reduced through the decrease in the number of times that the multiple photons make the round trips in the photodiode semiconductor stack.

Abstract: In some examples, a photodiode module may include a photodiode chip, a submount located adjacent to the photodiode chip, and a heating element to heat the photodiode chip. By increasing the temperature of the photodiode chip through use of the heating element, the cutoff wavelength of the photodiode chip may be increased, which may also increase the quantum efficiency and the recovery time of the photodiode chip.

Abstract: A photodetector includes a Helmholtz resonator and a photosensitive structure that is placed in an electric-field-concentrating interval forming part of the Helmholtz resonator. Such a photodetector is in particular suitable for imaging applications. The wavelength of the radiation to be detected is determined by dimensions of the Helmholtz resonator, within a detection spectral interval of the photosensitive structure.

Abstract: A photodetector includes a Helmholtz resonator and a photosensitive structure that is placed in an electric-field-concentrating interval forming part of the Helmholtz resonator. Such a photodetector is in particular suitable for imaging applications. The wavelength of the radiation to be detected is determined by dimensions of the Helmholtz resonator, within a detection spectral interval of the photosensitive structure.

Abstract: According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength ?0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength ?0>?0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength ?0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength ?rad, wherein the radiative wavelength ?rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

Abstract: According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centred around a central wavelength ?0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength ?0>?0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength ?0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength ?rad, wherein the radiative wavelength ?rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.