Patents by Inventor Michael Vincent Kattner

Michael Vincent Kattner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodetector structures formed on high-index substrates
    Patent number: 11251320
    Abstract: A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: February 15, 2022
    Assignee: IQE plc
    Inventors: Dmitri Lubyshev, Joel Mark Fastenau, Amy Wing Kwan Liu, Michael Vincent Kattner, Philip Lee Frey, Scott Alan Nelson, Mark Justin Furlong
  • Optoelectronic devices formed over a buffer
    Patent number: 11069825
    Abstract: An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: July 20, 2021
    Assignee: IQE plc
    Inventors: Amy Wing Kwan Liu, Dmitri Lubyshev, Joel Mark Fastenau, Scott Alan Nelson, Michael Vincent Kattner, Philip Lee Frey, Matthew Fetters, Hubert Krysiak, Zhaoquan Zeng, Aled Owen Morgan, Stuart Andrew Edwards
  • PHOTODETECTOR STRUCTURES FORMED ON HIGH-INDEX SUBSTRATES
    Publication number: 20200328315
    Abstract: A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.
    Type: Application
    Filed: April 9, 2020
    Publication date: October 15, 2020
    Inventors: Dmitri Lubyshev, Joel Mark Fastenau, Amy Wing Kwan Liu, Michael Vincent Kattner, Philip Lee Frey, Scott Alan Nelson, Mark Justin Furlong
  • OPTOELECTRONIC DEVICES FORMED OVER A BUFFER
    Publication number: 20190371947
    Abstract: An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.
    Type: Application
    Filed: May 28, 2019
    Publication date: December 5, 2019
    Inventors: Amy Wing Kwan Liu, Dmitri Lubyshev, Joel Mark Fastenau, Scott Alan Nelson, Michael Vincent Kattner, Philip Lee Frey, Matthew Fetters, Hubert Krysiak, Zhaoquan Zeng, Aled Owen Morgan, Stuart Andrew Edwards