Abstract: A memory device, including a plurality of nanoscale memory cells (1510, 1512) created by applying pressure to and removing pressure from one or more regions (1510, 1512) of a substance (1502) to change the electrical conductivity of those regions (1510, 1512). An electrically conductive read probe (1514) determines the conductivities of the regions and thereby the information stored in the cells. A write probe (1508) applies pressure to and removes pressure from selected cells to change the electrical conductivity of those cells and thereby store or erase information.

Abstract: A device (10) for evaluating dynamic, mechanical properties of materials includes an elongate cylindrical housing (12) projecting from a handle (14). The housing (12) defines a passage (16). One end of the passage (16) is closed off by a plug (18) with an opposed end of the passage (16) having an end cap (20). A resiliently flexible beam (22) is arranged in a cantilevered manner in the passage (16). A probe (24) is arranged at a free end of the beam (22). A strain gauge array (28) is mounted on the beam (22) for monitoring the deflection of the beam (22) and for generating an output signal representative of the movement of the beam (22). A method for evaluating dynamic, mechanical properties of materials is also disclosed.