Abstract: A method for safeguarding a vehicle with vehicle security technology. A computer program, a device, and a storage medium for this purpose are also described.

Abstract: A method for controlling an autonomous mobile robot. According to one exemplary embodiment, the method comprises the storage and management of at least one map associated with an area of use for the robot and the navigation of the robot through the area of use for the robot, wherein the robot continuously determines its position on the map. The method further comprises the detection of a repositioning procedure, during which the robot carries out a movement that the robot itself cannot control. During this repositioning procedure, the robot detects information about its position and/or its state of motion with the aid of sensors and, based on the detected information, determines an estimated value for its position.

Abstract: Systems and methods are provided to provide guidance to a user regarding management of a physiologic condition such as diabetes. The determination may be based upon a patient glucose concentration level. The glucose concentration level may be provided to a stored model to determine a state. The guidance may be determined based at least in part on the determined state.

Abstract: A copolyester is provided comprising: a. at least one terephthalate acid residue; b. about 85 to about 96 mole % of ethylene glycol residues; c. about 4 to about 15 mole % of a combination of 1,4-cyclohexanedimethanol residues (CHDM) and diethylene glycol (DEG) residues; and d. a germanium catalyst present in the copolyester at a concentration of about 5 to about 500 ppm based on elemental germanium; wherein the terephthalate monomer is based on the substantially equal diacid equivalents of 100 mole % to diol equivalence of 100 mole % for a total of 200 mole %.

Abstract: A PVT method is utilized for production of single crystals in an apparatus, which comprises a growth cell, a process chamber in which the growth cell is located and a heating device surrounding the process chamber for heating the growth cell. In this method, a source material and a seed are introduced into the growth cell, and the process chamber is filled with a process gas and the growth cell is heated, causing the source material to sublimated and resublimated at the seed. An apparatus designed for production of single crystals using the PVT method includes a highly heatable growth cell for accommodation of a source material and a seed, a process chamber accommodating the growth cell with a connection to a process gas source for filling it with a process gas, and a heating device for heating the growth cell.

Abstract: The present invention provides monocrystalline 4H—SiC semi-finished products having a specific orientation of its crystal structure which is set such as to reduce or even eliminate the occurrence of cracks or fissures during mechanical processing, and method of producing same. The monocrystalline 4H—SiC semi-finished product, which has a longitudinal axis and an at least partially curved lateral surface parallel to said longitudinal axis, is characterized in that the crystal structure of the 4H—SiC semi-finished product is oriented with respect to the longitudinal axis such that at each position on the lateral surface of the semi-finished product there is a line segment which is intersected by at least a predetermined minimum number of parallel cleavage planes of the {1010} form per unit length, wherein the line segment is defined by a plane tangent to the lateral surface at said position.

Abstract: An optical surveying instrument is provided with an optical arrangement that includes at least one lens and the viewing element defining a viewing direction in the field of view. The distance measurement unit emits light beam towards the field of view and measured the distance to an object in the field of view based on a reflection of the light beam from the object. A movable mirror is arranged to direct the light beam towards the object and a mirror control unit is provided for reading calibration values from a calibration value memory and for moving the movable mirror using the calibration values to adjust the direction of the light beam to be aligned with the viewing direction.

Abstract: A method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes connecting a pair of reactors to a vacuum pump system by a common vacuum channel and creating and/or controlling, with the vacuum pump system, a common gas phase condition in the inner chambers of the pair of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a semiconductor single crystal.

Abstract: A scanning surveying system comprises a base 5, an alidade 3 mounted on the base, a first motor 6 to rotate the alidade about a first axis 9, a rotating mirror 21 rotatable about a second axis 16, a second motor 23 to rotate the mirror. An optical distance measuring unit 11 is configured to direct measuring light onto the rotating mirror such that it is reflected towards objects and to receive measuring light back from these objects via the rotating mirror. The system further comprises a camera 81 and a controller for controlling the first motor based on the images recorded by the camera such that the measuring light is reflected from the rotating mirror in a direction corresponding to a selected location within the image.

Abstract: Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (102) having a longitudinal axis (120) and a sidewall (116) extending along the longitudinal axis (120), wherein the crucible comprises a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108), and a heating system being formed to generate a temperature field around a circumference of the crucible along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first heat radiation cavity (118), which is arranged opposite to the fixing means and adjacent to the source material compartment (104), the first heat radiation cavity (118) being closed on all of its sides.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible at one or more defined heights along the longitudinal axis of the crucible; a rotary drive that is operable to cause a rotational movement of the fixing means around the longitudinal axis relative to the heating system.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102); a thermal insulation unit (117) at least partly surrounding the crucible (102), wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field.

Abstract: A surveying system comprises a base 3, a first alidade 7 mounted on the base and rotatable relative to the base about a first axis 9, a first optical instrument 17 mounted on the first alidade 7, wherein the first optical instrument is configured to emit a first beam 41 of measuring light, a second alidade 19 mounted on the base and rotatable relative to the base about a second axis 21, and a second optical instrument 25 mounted on the second alidade, wherein the second axis substantially coincides with the first axis. The first optical instrument includes a scanner 31, and the second optical instrument includes at least one camera 63.

Abstract: The present invention relates to a stent graft, comprising: a base stent having a first and a second longitudinal end, a lumen extending longitudinally through the base stent, a covering material provided so as to line the base stent, the base stent having a roughened surface that is at least partially penetrated by the covering material so as to form a positive fit.

Abstract: An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.

Abstract: A SiC volume monocrystal is produced by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. Prior to the start of growth, the SiC seed crystal is examined at the growth surface for the presence of seed screw dislocations, nucleation centers are generated, wherein the nucleation centers are starting points for at least one compensation screw dislocation during the growth carried out subsequently.

Abstract: Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates.