Patents by Inventor Michael Vyvoda

Michael Vyvoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7967936
    Abstract: Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.
    Type: Grant
    Filed: December 15, 2008
    Date of Patent: June 28, 2011
    Assignee: Twin Creeks Technologies, Inc.
    Inventors: Aditya Agarwal, Srinivasan Sivaram, Michael Vyvoda
  • Publication number: 20100147448
    Abstract: Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.
    Type: Application
    Filed: December 15, 2008
    Publication date: June 17, 2010
    Applicant: TWIN CREEKS TECHNOLOGIES, INC.
    Inventors: Aditya Agarwal, Srinivasan Sivaram, Michael Vyvoda
  • Patent number: 6960495
    Abstract: A method for forming a contact in a three dimensional monolithic memory is disclosed. In a preferred embodiment, the method comprises depositing a conductive layer over and in contact with a plurality of antifuses, wherein said antifuses are part of a story of active devices formed above a substrate; patterning and etching said conductive layer and insulating dielectric to form a contact void; and filling the contact void, wherein the conductive layer does not comprise silicon.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: November 1, 2005
    Assignee: Matrix Semiconductor, Inc
    Inventors: Michael Vyvoda, S. Brad Herner
  • Publication number: 20050012220
    Abstract: An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
    Type: Application
    Filed: May 26, 2004
    Publication date: January 20, 2005
    Applicant: MATRIX SEMICONDUCTOR
    Inventors: Michael Vyvoda, S. Herner