Abstract: An improved method of forming seed openings for zone-melting and recrystallization of polysilicon film on an insulator over silicon (SOI) is described. This method comprises forming a narrow discontinuous pattern of seed openings formed by an overlapping sub-pattern of discontinuous shaped openings. Alternatively, in an edge bead seed embodiment, a resist is removed from an SOI precursor structure, comprising an insulator on an Si wafer, thus exposing the peripheral edge of the insulator. The exposed insulator is then also removed to provide a peripheral edge seed opening to the underlying Si wafer.

Abstract: A process for providing in an integrated circuit on which there are to be formed at least two levels of metal conductors, includes depositing a first blanket layer of silicon dioxide over the first metal film conductors, spinning on a silicon glass precursor compound carried by an organic vehicle and heat curing to produce a silica coat, covering this sheet by spinning on a layer of photoresist resin and subsequently etching back this stack of insulating layers to leave a thinned but contiguous first silicon dioxide layer, to leave only thick plug portions of the underlying silica coat in deepest recess regions of the underlying silicon dioxide layer and to leave none of the photoresist layer.