Abstract: Various embodiments of an optical construction and an electronic device that includes such optical construction are disclosed. The optical construction includes a lens film having an outermost structured first major surface and an opposing outermost substantially planar second major surface. The structured first major surface includes a plurality of microlenses. The optical construction further includes a mask disposed adjacent to the second major surface of the lens film, where the mask includes a polymeric layer, a metal layer, and a plurality of laser-ablated openings disposed through the mask and aligned to the microlenses in a one-to-one correspondence.

Abstract: Fluorinated coatings having a lubricious additive, articles with the fluorinated coatings, and methods of making articles with the fluorinated coatings are provided. More specifically, the fluorinated coatings are prepared from a curable coating composition that includes both a fluorinated silane and a fluorinated polyether oil. The curable coating composition is typically applied adjacent to a siliceous substrate and then cured. The resulting cured articles can have an outer surface that has a good tactile response, that is abrasion resistant, that is easy to clean, or a combination thereof.

Abstract: Fluorinated coatings having a lubricious additive, articles with the fluorinated coatings, and methods of making articles with the fluorinated coatings are provided. More specifically, the fluorinated coatings are prepared from a curable coating composition that includes both a fluorinated silane and a fluorinated polyether oil. The curable coating composition is typically applied adjacent to a siliceous substrate and then cured. The resulting cured articles can have an outer surface that has a good tactile response, that is abrasion resistant, that is easy to clean, or a combination thereof.

Abstract: A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.

Abstract: A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.

Abstract: A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.

Abstract: A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.

Abstract: Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.

Abstract: Electronic devices such as transistors are disclosed. The electronic device includes an electrically conductive gate electrode, an anodized layer disposed on the gate electrode, a dielectric layer disposed on the anodized layer, and a semiconductor oxide layer that has a channel region. The channel region is disposed on the dielectric layer and has an internal resistance. The internal resistance of the channel can change when an electrical signal is applied to the gate electrode.

Abstract: Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.