Abstract: An interdigitated back-contact vertical-junction solar cell which utilizes an anisotropically etched 110-oriented silicon crystal wafer. The cell structure includes rounded corner top edges of the between cell channel walls in order to improve light capturing ability and also has pn-junctions disposed over all of the cavity internal surfaces. Additional pn-junctions are located on the rear surface of the cell array to assist in generated carrier collection into a rear mounted metallic conductor grid. The disclosed cell has desirable transducer efficiency, without the use of anti-reflection coatings, and previous improved physical robustness, and radiation hardening. Fabrication of the cell array includes an isotropic etch of the cell dividers and the anisotropic etching to form cell cavities.