Abstract: A non-linear transistor circuit uses separate signal biasing and DC biasing to improve the power efficiency while preventing thermal runaway. An improved amplifier using this circuit has a DC bias voltage supply. Using separate biasing of the DC supply voltage and the signal allows a large value resistance for the DC bias network to prevent thermal runaway and a small value resistance for the signal biasing network to improve the circuit's efficiency. A point of thermal equilibrium is reached when the voltage drop across the DC bias resistance sufficiently reduces the voltage between the transistor's base and emitter, VBE, the base current, the collector current, and the junction temperature, resulting in thermal equilibrium.

Abstract: A non-linear transistor circuit uses separate signal biasing and DC biasing to improve the power efficiency while preventing thermal runaway. An improved amplifier using this circuit has a DC bias voltage supply. Using separate biasing of the DC supply voltage and the signal allows a large value resistance for the DC bias network to prevent thermal runaway and a small value resistance for the signal biasing network to improve the circuit's efficiency. A point of thermal equilibrium is reached when the voltage drop across the DC bias resistance sufficiently reduces the voltage between the transistor's base and emitter, VBE, the base current, the collector current, and the junction temperature, resulting in thermal equilibrium.