Abstract: A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

Abstract: A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

Abstract: A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

Abstract: A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: A substrate support assembly positively secures a substrate holder support to a rotation shaft with respect to rotationally applied forces. A substrate holder support is configured to have an opening in a socket into which, when aligned with an indentation in the rotational shaft to form a passage, a retaining member is removably inserted to engage both the socket opening and the shaft indentation. Methods of rotating a substrate while minimizing rotational slippage of the substrate holder support with respect to the shaft are also provided.

Abstract: A chemical vapor deposition apparatus comprises a reaction chamber and one or more vitreous components having an outer surface that is covered at least in part by a devitrification barrier layer. In some arrangements, the one or more vitrious components can include a thermocouple. In a preferred arrangement, the devitrification barrier coating is formed from silicon nitride, which can be deposited on the vitreous component using chemical vapor deposition (CVD).

Abstract: An improved support is provided for locating a lamp filament axially within a lamp sleeve. The illustrated support is a spiral coil that includes a small diameter center portion that makes contact with the filament. On either side of the filament-contacting portion, the coil opens up to larger diameters for contacting the inner wall of the quartz sleeve within which the filament is housed. The support thus appears H-shaped when viewed from the side. A lamp filament is also provided with expansion compensation sections at either end of a central section. The filament wire in the compensation sections is wound into coils having a greater diameter and also a greater spacing between windings, as compared to coil in the central section. The expansion compensation sections are preferably capable of compressing and thereby absorbing thermal expansion of the filament during operation, without shorting the filament across adjacent windings.

Abstract: The packaging system comprises a first plurality of interlaced fingers disposed in the upper portion of a box, and a second plurality of interlaced fingers disposed in a lower portion. The fingers provide provide a soft support for a product placed between the fingers.

Abstract: A structure for use in a semiconductor processing environment is provided, including a first plate a second plate bonded to the first plate. A distal end of the second plate extends beyond a distal end of the first plate. The distal end of the first plate is tapered along a length at least one-half of a width of the first plate adjacent the tapered distal end of the first plate.

Abstract: A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a center portion and thicker in a surrounding peripheral portion. The thickness increases in the radially outward direction, defined between the flat inner surface and a concave outer surface. Deposition uniformity is improved by employing multiple outlet ports for distributing gas laterally in a short length, enabling a compact, symmetrical geometry. Preferably, a quadra-flow system of gas distribution is used, whereby the chamber contains one inlet port and three outlet ports distributed approximately at 90 degrees around a cylindrical side wall defining the chamber space.

Abstract: An improved support is provided for locating a lamp filament axially within a lamp sleeve. The illustrated support is a spiral coil that includes a small diameter center portion that makes contact with the filament. On either side of the filament-contacting portion, the coil opens up to larger diameters for contacting the inner wall of the quartz sleeve within which the filament is housed. The support thus appears H-shaped when viewed from the side. A lamp filament is also provided with expansion compensation sections at either end of a central section. The filament wire in the compensation sections is wound into coils having a greater diameter and also a greater spacing between windings, as compared to coil in the central section. The expansion compensation sections are preferably capable of compressing and thereby absorbing thermal expansion of the filament during operation, without shorting the filament across adjacent windings.

Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: An improved support is provided for locating a lamp filament axially within a lamp sleeve. The illustrated support is a spiral coil that includes a small diameter center portion that makes contact with the filament. On either side of the filament-contacting portion, the coil opens up to larger diameters for contacting the inner wall of the quartz sleeve within which the filament is housed. The support thus appears H-shaped when viewed from the side. A lamp filament is also provided with expansion compensation sections at either end of a central section. The filament wire in the compensation sections is wound into coils having a greater diameter and also a greater spacing between windings, as compared to coil in the central section. The expansion compensation sections are preferably capable of compressing and thereby absorbing thermal expansion of the filament during operation, without shorting the filament across adjacent windings.

Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: The packaging system comprises a first plurality of interlaced fingers disposed in the upper portion of a box, and a second plurality of interlaced fingers disposed in a lower portion. The fingers provide provide a soft support for a product placed between the fingers.

Abstract: The chamber has a lenticular cross-section with a horizontal support plate extending between sides of the chamber. A rectangular aperture is formed in the support plate for positioning a rotatable susceptor. A temperature compensation ring surrounds the susceptor and is supported by fingers connected to the support plate. The ring may be circular or may conform to the shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A sacrificial quartz plate may be provided between the circular ring and the rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into an upper region and purge gas into a lower region.

Abstract: An improved support is provided for locating a lamp filament axially within a lamp sleeve. The illustrated support is a spiral coil that includes a small diameter center portion that makes contact with the filament. On either side of the filament-contacting portion, the coil opens up to larger diameters for contacting the inner wall of the quartz sleeve within which the filament is housed. The support thus appears H-shaped when viewed from the side. A lamp filament is also provided with expansion compensation sections at either end of a central section. The filament wire in the compensation sections is wound into coils having a greater diameter and also a greater spacing between windings, as compared to coil in the central section. The expansion compensation sections are preferably capable of compressing and thereby absorbing thermal expansion of the filament during operation, without shorting the filament across adjacent windings.

Abstract: An improved exhaust conductance system for a CVD reactor includes two exhaust paths and a three-way valve controlling flow to the exhaust paths. The valve directs flow through a first exhaust conductance path when reactant gas passes through the reactor, and through a second exhaust conductance path after reactant gas has been purged from the chamber and only purging gas is flowing through the reactor.