Patents by Inventor Michael W Matthews

Michael W Matthews has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9390906
    Abstract: The present invention consists of a method for imparting asymmetry to a truncated annular wafer by either rounding one corner of the orientation flat, or rounding one corner of a notch. This novel method of rounding corners impart a visual and/or tactile asymmetry which can be utilized by a person in order to differentiate between the two different sides of the wafer. This inventive wafer design and method for making an asymmetric wafer is especially useful in the field of semiconductor technology and may be used on sapphire crystal wafers or any other class of wafer.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: July 12, 2016
    Assignee: Rubicon Technology, Inc.
    Inventors: Michael W. Matthews, Sunil B. Phatak
  • Patent number: 8623136
    Abstract: The present invention consists of a method for imparting asymmetry to a truncated annular wafer by either rounding one corner of the orientation flat, or rounding one corner of a notch. This novel method of rounding corners impart a visual and/or tactile asymmetry which can be utilized by a person in order to differentiate between the two different sides of the wafer. This inventive wafer design and method for making an asymmetric wafer is especially useful in the field of semiconductor technology and may be used on sapphire crystal wafers or any other class of wafer.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: January 7, 2014
    Assignee: Rubicon Technology, Inc.
    Inventors: Michael W. Matthews, Sunil B. Phatak
  • Patent number: 8389099
    Abstract: The present invention consists of a method for imparting asymmetry to a truncated annular wafer by either rounding one corner of the orientation flat, or rounding one corner of a notch. This novel method of rounding corners impart a visual and/or tactile asymmetry which can be utilized by a person in order to differentiate between the two different sides of the wafer. This inventive wafer design and method for making an asymmetric wafer is especially useful in the field of semiconductor technology and may be used on sapphire crystal wafers or any other class of wafer.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: March 5, 2013
    Assignee: Rubicon Technology, Inc.
    Inventors: Michael W Matthews, Sunil B. Phatak
  • Patent number: 5062707
    Abstract: An ambient surface contamination sensor including a source for supplying gas, which is energized before it reaches the surface being sensed so that it is capable of transferring energy to the contaminants on the surface or vapor originating therefrom. The sensor then detects the optical emission from the gas passed over the surface within a selected wavelength band characteristic of the presence on the surface of the contaminant, and indicates the presence of the contaminant on the surface when such an emission is detected.
    Type: Grant
    Filed: November 6, 1990
    Date of Patent: November 5, 1991
    Assignee: Spectral Sciences, Inc.
    Inventors: Steven Adler-Golden, Michael W. Matthew
  • Patent number: 4785184
    Abstract: An infrared trace element detection system including an optical cell into which the sample fluid to be examined is introduced and removed. Also introduced into the optical cell is a sample beam of infrared radiation in a first wavelength band which is significantly absorbed by the trace element and a second wavelength band which is not significantly absorbed by the trace element for passage through the optical cell through the sample fluid. The output intensities of the sample beam of radiation are selectively detected in the first and second wavelength bands. The intensities of a reference beam of the radiation are similarly detected in the first and second wavelength bands. The sensed output intensity of the sample beam in one of the first and second wavelength bands is normalized with respect to the other and similarly, the intensity of the reference beam of radiation in one of the first and second wavelength bands is normalized with respect to the other.
    Type: Grant
    Filed: May 27, 1986
    Date of Patent: November 15, 1988
    Assignee: Spectral Sciences, Inc.
    Inventors: Fritz Bien, Lawrence S. Bernstein, Michael W. Matthew
  • Patent number: 4782232
    Abstract: An infrared monitor for measuring the presence of at least one gas phase molecular species including a sample path for containing a sample to be monitored for the molecular species. A sample beam of infrared source emission of the molecular species to be monitored for passage through the sample path is provided to the sample path. The sample beam includes at least one primary spectral emission line which is significantly absorbed by the molecular species. The decrease in the intensity of the at least one primary infrared source spectral emission line passing through the sample path is detected as a function of the absorption of the at least one line by the molecular species present in the sample.
    Type: Grant
    Filed: September 22, 1986
    Date of Patent: November 1, 1988
    Assignee: Spectral Sciences, Inc.
    Inventors: Lawrence S. Bernstein, Michael W. Matthew, Fritz Bien
  • Patent number: 4780613
    Abstract: An infrared species specific emission source which includes a closed container having at least one transparent portion for containing at least one specific molecular species. The molecular species within the container is heated sufficiently to cause the species to emit a characteristic infrared spectal emission through the at least one transparent portion of the container to the infrared instrument.
    Type: Grant
    Filed: September 22, 1986
    Date of Patent: October 25, 1988
    Assignee: Spectral Sciences, Inc.
    Inventors: Lawrence S. Berstein, Michael W. Matthew, Fritz Bien
  • Patent number: 4559096
    Abstract: A method of precisely modifying a selected area of a workpiece by producing a beam of charged cluster ions that is narrowly mass selected to a predetermined mean size of cluster ions within a range of 25 to 10.sup.6 atoms per cluster ion, and accelerated in a beam to a critical velocity. The accelerated beam is used to impact a selected area of an outer surface of the workpiece at a preselected rate of impacts of cluster ions/cm.sup.2 /sec. in order to effect a precise modification in that selected area of the workpiece.
    Type: Grant
    Filed: June 25, 1984
    Date of Patent: December 17, 1985
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Lewis Friedman, Robert J. Buehler, Michael W. Matthew, Myron Ledbetter