Patents by Inventor Michael Xi Yang

Michael Xi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple precursor cyclical deposition system
    Patent number: 7396565
    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: July 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi
  • Multiple precursor cyclical deposition system
    Patent number: 6846516
    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).
    Type: Grant
    Filed: April 8, 2002
    Date of Patent: January 25, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi
  • Multiple precursor cyclical deposition system
    Publication number: 20030190423
    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).
    Type: Application
    Filed: April 8, 2002
    Publication date: October 9, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi